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SISA12ADN-T1-GE3

SISA12ADN-T1-GE3
Mfr. #:
SISA12ADN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA12ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISA12ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
3.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
51 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SISA12A, SISA12, SISA1, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R
***ure Electronics
MOSFET For New Design See: 78-SISHA12ADN-T1-GE3
***nell
MOSFET, N-CH, 30V, 25A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited
***S
French Electronic Distributor since 1988
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK 1212-8
***et
Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET, N CHANNEL, 30V, 30A, POWERPAK 12
***el Electronic
MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK SO-8
***ark
N-Ch Powerpakso-8 Bwl 30V Gen4 4.3/6.0 Mohm@10V/4.5V Rohs Compliant: Yes
***enic
30V 25A 31W 4.3m´Î@10V10A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
*** Electronics
MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8
***ure Electronics
N-Channel 30 V 60 A 5 W 3.7 mOhm Surface Mount Power Mosfet - PowerPAK® SO-8
***ark
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature;RoHS Compliant: Yes
***ure Electronics
N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO
***et
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;
***rchild Semiconductor
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***nell
MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;D-Pak (TO-252AA);PD 45W
***ark
Mosfet Transistor, N Channel, 22 A, 30 V, 45 Mohm, 10 V, 1 V
***ure Electronics
Single N-Channel 30 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***nell
MOSFET, N, 30V, 22A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Diss
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
***et
Trans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
***(Formerly Allied Electronics)
MOSFET N-Channel 30V 8.7A HEXFET PQFN6EP
***nell
MOSFET,W DIODE,N CH,30V,8.7A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISA12ADN-T1-GE3
DISTI # V72:2272_09216151		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 EP T/R30
  • 25:$0.5657
  • 10:$0.5677
  • 1:$0.6674
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 25A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3078In Stock
  • 1000:$0.3988
  • 500:$0.4985
  • 100:$0.6730
  • 10:$0.8720
  • 1:$1.0000
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 25A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3078In Stock
  • 1000:$0.3988
  • 500:$0.4985
  • 100:$0.6730
  • 10:$0.8720
  • 1:$1.0000
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 25A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3509
SISA12ADN-T1-GE3
DISTI # C1S803602308767		Vishay IntertechnologiesMOSFETs
RoHS: Not Compliant		30
  • 25:$0.5657
  • 10:$0.5677
SISA12ADN-T1-GE3
DISTI # 25789971		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 EP T/R30
  • 23:$0.6674
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA12ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3199
  • 6000:$0.3099
  • 12000:$0.2979
  • 18000:$0.2889
  • 30000:$0.2819
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R (Alt: SISA12ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.5289
  • 6000:€0.3609
  • 12000:€0.3099
  • 18000:€0.2869
  • 30000:€0.2669
SISA12ADN-T1-GE3
DISTI # SISA12ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R (Alt: SISA12ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISA12ADN-T1-GE3
    DISTI # 19X1955    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V , RoHS Compliant: Yes8997
    • 1:$0.8800
    • 10:$0.7020
    • 25:$0.6460
    • 50:$0.5890
    • 100:$0.5330
    • 500:$0.4400
    • 1000:$0.3520
    SISA12ADN-T1-GE3
    DISTI # 78-SISA12ADN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		7168
    • 1:$0.8800
    • 10:$0.7020
    • 100:$0.5330
    • 500:$0.4400
    • 1000:$0.3520
    • 3000:$0.3190
    SISA12ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas -
    • 3000:$0.3100
    • 6000:$0.2930
    • 12000:$0.2840
    • 24000:$0.2800
    SISA12ADN-T1-GE3
    DISTI # 2364100    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 25A, PPAK1212-8
    RoHS: Compliant    		8997
    • 1:$1.4000
    • 10:$1.1200
    • 100:$0.8440
    • 500:$0.6970
    • 1000:$0.5570
    • 3000:$0.5060
    SISA12ADN-T1-GE3
    DISTI # 2364100    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 25A, PPAK1212-8
    RoHS: Compliant    		8997
    • 5:£0.6020
    • 25:£0.5450
    • 100:£0.4070
    • 250:£0.3720
    • 500:£0.3360
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    Mfr.#: CMPTA46 TR

    OMO.#: OMO-CMPTA46-TR

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    Mfr.#: SISA18ADN-T1-GE3

    OMO.#: OMO-SISA18ADN-T1-GE3

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    B340A-E3/5AT

    Mfr.#: B340A-E3/5AT

    OMO.#: OMO-B340A-E3-5AT

    		 Schottky Diodes & Rectifiers 3.0 Amp 40 Volt
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    Mfr.#: IRFZ44NSTRLPBF

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    Mfr.#: TPS560430XFDBVR

    OMO.#: OMO-TPS560430XFDBVR

    		 Switching Voltage Regulators NIXON TPS560430XFDBVR DC-DC CONVERTER
    LPS22HHTR

    Mfr.#: LPS22HHTR

    OMO.#: OMO-LPS22HHTR

    		 Board Mount Pressure Sensors CONSUMER MEMS
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    Mfr.#: TPS560430XFDBVR

    OMO.#: OMO-TPS560430XFDBVR-TEXAS-INSTRUMENTS

    		 Conv DC-DC 4V to 36V Synchronous Step Down Single-Out 1V to 34.2V 0.6A Automotive 6-Pin SOT-23 T/R
    LPS22HHTR

    Mfr.#: LPS22HHTR

    OMO.#: OMO-LPS22HHTR-STMICROELECTRONICS

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    EEH-ZA1H330XP

    Mfr.#: EEH-ZA1H330XP

    OMO.#: OMO-EEH-ZA1H330XP-PANASONIC

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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von SISA12ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,87 $
    0,87 $
    10
    0,70 $
    7,01 $
    100
    0,53 $
    53,20 $
    500
    0,44 $
    220,00 $
    1000
    0,35 $
    352,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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