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2SJ668(Q)

2SJ668(Q)
Mfr. #:
2SJ668(Q)
Hersteller:
Toshiba America Electronic Components
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SJ668(Q) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SJ668, 2SJ66, 2SJ6, 2SJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold
***(Formerly Allied Electronics)
MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W
***et Europe
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
***ure Electronics
SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
***ark
Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.046Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pinsrohs Compliant: No
***ment14 APAC
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W
***ponent Sense
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
*** Electronics
SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC
***ure Electronics
Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55C
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm
***ure Electronics
Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - SOIC-8
***th Star Micro
Transistor MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
***(Formerly Allied Electronics)
Power MOSFET,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6A,SO-8,PD 1.7W,VGS+/-20V,gFS 25S
***ark
N Channel Mosfet, 60V, 8.5A, Soic-8, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.5A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:3.3W Rohs Compliant: No
***ment14 APAC
MOSFET, N, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.7W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:8.5A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ
***ure Electronics
N-Channel 60 V 35 mOhm SMT PowerTrench Mosfet SOIC-8
***Yang
Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***(Formerly Allied Electronics)
NTTFS5116PLTAG P-channel MOSFET Transistor 20 A 60 V 8-Pin WDFN
***ure Electronics
P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power MOSFET - WDFN-8
***emi
Single P-Channel Power MOSFET -60V, -20A, 52mΩ
***ark
MOSFET, P-CH, 60V, 5.7A, 175DEG C, 3.2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
P-Channel Power MOSFET, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK
*** Stop Electro
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Teil # Mfg. Beschreibung Aktie Preis
2SJ668(Q)
DISTI # C1S751201084143		Toshiba America Electronic ComponentsTrans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold
RoHS: Compliant		850
  • 500:$4.2400
  • 200:$4.3500
  • 100:$4.6400
  • 50:$5.1900
Bild Teil # Beschreibung
2SJ668(TE16L1,NQ)

Mfr.#: 2SJ668(TE16L1,NQ)

OMO.#: OMO-2SJ668-TE16L1-NQ-

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2SJ637-E

Mfr.#: 2SJ637-E

OMO.#: OMO-2SJ637-E-1190

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2SJ600(0)-Z-EJ

Mfr.#: 2SJ600(0)-Z-EJ

OMO.#: OMO-2SJ600-0--Z-EJ-1190

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2SJ605-Z-E1

Mfr.#: 2SJ605-Z-E1

OMO.#: OMO-2SJ605-Z-E1-1190

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2SJ609

Mfr.#: 2SJ609

OMO.#: OMO-2SJ609-1190

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2SJ610

Mfr.#: 2SJ610

OMO.#: OMO-2SJ610-1190

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2SJ621-T1B-A

Mfr.#: 2SJ621-T1B-A

OMO.#: OMO-2SJ621-T1B-A-1190

 Neu und Original
2SJ647-T1-A

Mfr.#: 2SJ647-T1-A

OMO.#: OMO-2SJ647-T1-A-1190

 Trans MOSFET P-CH 20V 0.4A 3-Pin SC-70 T/R (Alt: 2SJ647-T1-A)
2SJ673-S12-AZ

Mfr.#: 2SJ673-S12-AZ

OMO.#: OMO-2SJ673-S12-AZ-1190

 Neu und Original
2SJ610(TE16L1,NQ)-ND

Mfr.#: 2SJ610(TE16L1,NQ)-ND

OMO.#: OMO-2SJ610-TE16L1-NQ--ND-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von 2SJ668(Q) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,36 $
6,36 $
10
6,04 $
60,42 $
100
5,72 $
572,40 $
500
5,41 $
2 703,00 $
1000
5,09 $
5 088,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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