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| PartNumber | 2SJ668(TE16L1,NQ) | 2SJ668 | 2SJ668(Q) |
| Description | MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET | |
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PW-Mold-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2SJ668 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.012804 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
2SJ668(TE16L1,NQ) | MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm | |
| 2SJ668(TE16L1,NQ) | MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm | ||
| 2SJ668 | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET | ||
| 2SJ668(Q) | Neu und Original | ||
| 2SJ668(TE16L1NQ) | Neu und Original | ||
| 2SJ668. | Neu und Original | ||
| 2SJ668(TE16L1NQ)-ND | Neu und Original |