FDBL0260N100

FDBL0260N100
Mfr. #:
FDBL0260N100
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Channel Power Trench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDBL0260N100 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDBL0260N100 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
H-PSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
200 A
Rds On - Drain-Source-Widerstand:
2.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
83 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
2.4 mm
Länge:
10.48 mm
Serie:
FDBL0260N100
Transistortyp:
1 N-Channel
Breite:
9.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
170 S
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
34 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.029985 oz
Tags
FDBL02, FDBL0, FDBL, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 200A, 2.6mΩ
***ical
Trans MOSFET N-CH 100V 200A 9-Pin(8+Tab) TO-LL T/R
***ark
Mosfet, N-Ch, 100V, 200A, Mo-299A-8; Transistor Polarity:n Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0021Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDBL0260N100
DISTI # V72:2272_14141736
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET0
    FDBL0260N100
    DISTI # V36:1790_14141736
    ON SemiconductorN-CHANNEL POWER TRENCH MOSFET0
      FDBL0260N100
      DISTI # FDBL0260N100CT-ND
      ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        FDBL0260N100
        DISTI # FDBL0260N100DKR-ND
        ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          FDBL0260N100
          DISTI # FDBL0260N100TR-ND
          ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
          RoHS: Compliant
          Min Qty: 2000
          Container: Tape & Reel (TR)
          Temporarily Out of Stock
          • 2000:$2.6204
          FDBL0260N100
          DISTI # FDBL0260N100
          ON SemiconductorN-CHANNEL POWER TRENCH MOSFET - Tape and Reel (Alt: FDBL0260N100)
          RoHS: Compliant
          Min Qty: 2000
          Container: Reel
          Americas - 0
          • 8000:$2.2900
          • 12000:$2.2900
          • 20000:$2.2900
          • 2000:$2.3900
          • 4000:$2.3900
          FDBL0260N100
          DISTI # 46AC0758
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-8,Transistor Polarity:N Channel,Continuous Drain Current Id:200A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes1931
          • 1000:$2.6500
          • 500:$3.1300
          • 250:$3.4900
          • 100:$3.6900
          • 50:$3.8800
          • 25:$4.0600
          • 10:$4.2500
          • 1:$5.0000
          FDBL0260N100
          DISTI # 512-FDBL0260N100
          ON SemiconductorMOSFET N-Channel Power Trench MOSFET
          RoHS: Compliant
          2137
          • 1:$4.9500
          • 10:$4.2100
          • 100:$3.6500
          • 250:$3.4600
          • 500:$3.1000
          • 1000:$2.6200
          • 2000:$2.4900
          FDBL0260N100
          DISTI # 2825149
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-8
          RoHS: Compliant
          1931
          • 1000:$3.8100
          • 500:$4.2100
          • 250:$4.7900
          • 100:$5.3300
          • 10:$6.1500
          • 1:$7.0500
          FDBL0260N100
          DISTI # 2825149
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-81935
          • 100:£3.3500
          • 10:£3.8600
          • 1:£5.0300
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          OMO.#: OMO-ADS1251U-2K5-TEXAS-INSTRUMENTS

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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1984
          Menge eingeben:
          Der aktuelle Preis von FDBL0260N100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          4,95 $
          4,95 $
          10
          4,21 $
          42,10 $
          100
          3,65 $
          365,00 $
          250
          3,46 $
          865,00 $
          500
          3,10 $
          1 550,00 $
          1000
          2,62 $
          2 620,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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