FDBL02

FDBL0240N100 vs FDBL0210N80 vs FDBL0200N100

 
PartNumberFDBL0240N100FDBL0210N80FDBL0200N100
DescriptionMOSFET N-Channel Power Trench MOSFETMOSFET Code D IMRMOSFET FET 100V 2.0 MOHM TOLL
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseH-PSOF-8H-PSOF-8H-PSOF-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V80 V-
Id Continuous Drain Current210 A240 A-
Rds On Drain Source Resistance2.8 mOhms4.1 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge79 nC130 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W357 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrenchPowerTrench-
PackagingReelReelReel
Height2.4 mm2.4 mm2.4 mm
Length10.48 mm10.48 mm10.48 mm
SeriesFDBL0240N100FDBL0210N80FDBL0200N100
Transistor Type1 N-Channel--
Width9.9 mm9.9 mm9.9 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min162 S--
Fall Time17 ns33 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time32 ns63 ns-
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time44 ns61 ns-
Typical Turn On Delay Time26 ns39 ns-
Unit Weight0.029985 oz0.029985 oz0.029985 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDBL0240N100 MOSFET N-Channel Power Trench MOSFET
FDBL0260N100 MOSFET N-Channel Power Trench MOSFET
FDBL0210N80 MOSFET Code D IMR
FDBL0200N100 MOSFET FET 100V 2.0 MOHM TOLL
ON Semiconductor
ON Semiconductor
FDBL0200N100 MOSFET N-CH 100V 300A 8-HPSOF
FDBL0240N100 MOSFET N-CH 100V 210A POWER56
FDBL0210N80 MOSFET N-CH 80V 240A H-PSOF8
FDBL0260N100 MOSFET N-CH 100V 200A 8PSOF
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