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IPB096N03L G

IPB096N03L G
Mfr. #:
IPB096N03L G
Hersteller:
INFINEON
Beschreibung:
IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB096N03L G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
IPB096N03LGATMA1 SP000254711
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
42 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2.6 ns
Anstiegszeit
3.2 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
35 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
9.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
16 ns
Typische-Einschaltverzögerungszeit
4 ns
Kanal-Modus
Erweiterung
Tags
IPB096N03LG, IPB096, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(2+Tab) TO-263
***ronik
N-CH 30V 35A 10mOhm TO263-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 42W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 71A D2PAK
***Yang
TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***inecomponents.com
30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET
***et
TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***el Electronic
Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603
***p One Stop Global
Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Chip Resistor - Surface Mount 60.4Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 60.4 OHM 1% 1/10W 0402
***nell
TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ical
Trans MOSFET N-CH 30V 25A 3-Pin(2+Tab) TO-263AB
***i-Key
MOSFET N-CH 30V 25A D2PAK
***S
French Electronic Distributor since 1988
***-Wing Technology
N-CHANNEL POWER MOSFET
***ser
Not available to order .
***ponent Stockers USA
20 A 30 V 0.0217 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 30V 20A TO263-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
N-KANAL POWER MOS
Teil # Mfg. Beschreibung Aktie Preis
IPB096N03LGATMA1
DISTI # IPB096N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB096N03LGATMA1
    DISTI # IPB096N03LGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB096N03LGATMA1
      DISTI # IPB096N03LGATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB096N03L G
        DISTI # 726-IPB096N03LG        		Infineon Technologies AGMOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
        RoHS: Compliant        		0
          IPB096N03LGInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		402
          • 1000:$0.3200
          • 500:$0.3400
          • 100:$0.3600
          • 25:$0.3700
          • 1:$0.4000
          IPB096N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		5000
          • 1000:$0.4100
          • 500:$0.4300
          • 100:$0.4500
          • 25:$0.4700
          • 1:$0.5100
          Bild Teil # Beschreibung
          IPB096N03L

          Mfr.#: IPB096N03L

          OMO.#: OMO-IPB096N03L-1190

          		 Neu und Original
          IPB096N03LG

          Mfr.#: IPB096N03LG

          OMO.#: OMO-IPB096N03LG-1190

          		 Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB096N03LGATMA1

          Mfr.#: IPB096N03LGATMA1

          OMO.#: OMO-IPB096N03LGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 35A TO-263-3
          IPB096N03L G

          Mfr.#: IPB096N03L G

          OMO.#: OMO-IPB096N03L-G-126

          		 IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1500
          Menge eingeben:
          Der aktuelle Preis von IPB096N03L G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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