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| PartNumber | IPB096N03L | IPB096N03LG | IPB096N03L G |
| Description | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 | |
| Manufacturer | - | - | INFINEON |
| Product Category | - | - | FETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB096N03LGATMA1 SP000254711 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 42 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 2.6 ns |
| Rise Time | - | - | 3.2 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 9.6 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 16 ns |
| Typical Turn On Delay Time | - | - | 4 ns |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| IPB096N03L | Neu und Original | ||
| IPB096N03LG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB096N03L G | IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 | ||
Infineon Technologies |
IPB096N03LGATMA1 | MOSFET N-CH 30V 35A TO-263-3 |