SI4825DDY-T1-GE3

SI4825DDY-T1-GE3
Mfr. #:
SI4825DDY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 30V 14.9A 8SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4825DDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4825DDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI4825D, SI4825, SI482, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.9A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
***ment14 APAC
MOSFET,P CH,DIODE,30V,14.9A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10.9A; Power Dissipation Pd:2.7W; Voltage Vgs Max:-25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4825DDY-T1-GE3
DISTI # V72:2272_09216587
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
2238
  • 1000:$0.4110
  • 500:$0.5030
  • 250:$0.5695
  • 100:$0.5930
  • 25:$0.7467
  • 10:$0.8477
  • 1:$1.0227
SI4825DDY-T1-GE3
DISTI # V36:1790_09216587
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
10000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # 31264063
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 2500:$0.3139
SI4825DDY-T1-GE3
DISTI # 30172383
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
2238
  • 19:$1.0227
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 12500
  • 125000:$0.4913
  • 62500:$0.4997
  • 25000:$0.5083
  • 12500:$0.5264
  • 7500:$0.5459
  • 5000:$0.5669
  • 2500:$0.5896
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3289
  • 15000:€0.3539
  • 10000:€0.3829
  • 5000:€0.4449
  • 2500:€0.6529
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3462
  • 15000:$0.3557
  • 10000:$0.3659
  • 5000:$0.3814
  • 2500:$0.3930
SI4825DDY-T1-GE3
DISTI # 15R5086
Vishay IntertechnologiesMOSFET Transistor, P Channel, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 23T8516
Vishay IntertechnologiesMOSFET,P CHANNEL,DIODE,30V,14.9A,8-SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes4305
  • 500:$0.5570
  • 250:$0.5970
  • 100:$0.6360
  • 50:$0.6930
  • 25:$0.7510
  • 10:$0.8080
  • 1:$0.9720
SI4825DDY-T1-GE3.
DISTI # 28AC2146
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:2.7W,No. of Pins:8PinsRoHS Compliant: No0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 70459545
Vishay Siliconix30V 14.9A 5.0W 12.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$0.5720
  • 5000:$0.5450
SI4825DDY-T1-GE3
DISTI # 781-SI4825DDY-GE3
Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant
6464
  • 1:$0.9400
  • 10:$0.7770
  • 100:$0.5960
  • 500:$0.5130
  • 1000:$0.4040
  • 2500:$0.3770
  • 5000:$0.3590
  • 10000:$0.3450
SI4825DDY-T1-GE3Vishay Semiconductors14900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA1520
  • 365:$0.4400
  • 92:$0.5500
  • 1:$1.1000
SI4825DDY-T1-GE3
DISTI # 1807295
Vishay IntertechnologiesP-CH MOSFET SO-8 30V 13MOHM @ 10V- LEAD(, RL2470
  • 10000:£0.3200
  • 5000:£0.3300
  • 2500:£0.3410
SI4825DDY-T1-GE3
DISTI # TMOSP10626
Vishay IntertechnologiesP-CH 30V 14,9A 12,5mOhm SO-8
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.4940
  • 5000:$0.4658
  • 7500:$0.4375
  • 10000:$0.3811
SI4825DDY-T1-GE3
DISTI # 1858962
Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC4680
  • 500:£0.3600
  • 250:£0.3890
  • 100:£0.4180
  • 25:£0.5450
  • 5:£0.6770
SI4825DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant
Americas - 2500
    SI4825DDY-T1-GE3
    DISTI # 1858962RL
    Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant
    0
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
    SI4825DDY-T1-GE3
    DISTI # 1858962
    Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant
    4300
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
    Bild Teil # Beschreibung
    SI4825DDY-T1-GE3

    Mfr.#: SI4825DDY-T1-GE3

    OMO.#: OMO-SI4825DDY-T1-GE3

    MOSFET -30V Vds 25V Vgs SO-8
    SI4825DDY

    Mfr.#: SI4825DDY

    OMO.#: OMO-SI4825DDY-1190

    Neu und Original
    SI4825DDY-T1-GE3

    Mfr.#: SI4825DDY-T1-GE3

    OMO.#: OMO-SI4825DDY-T1-GE3-VISHAY

    MOSFET P-CH 30V 14.9A 8SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SI4825DDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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