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FQI4N80TU

FQI4N80TU
Mfr. #:
FQI4N80TU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQI4N80TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
2.8 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
7.88 mm
Länge:
10.29 mm
Serie:
FQI4N80
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
3.8 S
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.073511 oz
Tags
FQI4N8, FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK
***nell
MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQI4N80TU
DISTI # 31271928		ON SemiconductorC00V N-CHANNEL QFET1000
  • 10000:$0.8198
  • 5000:$0.8534
  • 2500:$0.8861
  • 1000:$0.9514
FQI4N80TU
DISTI # 26637390		ON SemiconductorC00V N-CHANNEL QFET1000
  • 1000:$1.0050
FQI4N80TU
DISTI # FQI4N80TU-ND		ON SemiconductorMOSFET N-CH 800V 3.9A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.0895
FQI4N80TU
DISTI # C1S541901511465		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Tube
RoHS: Compliant		1000
  • 1000:$1.0200
FQI4N80TU
DISTI # FQI4N80TU		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N80TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7759
  • 2000:$0.7709
  • 4000:$0.7609
  • 6000:$0.7509
  • 10000:$0.7329
FQI4N80TU
DISTI # FQI4N80TU		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N80TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.0529
  • 10:€0.9569
  • 25:€0.8779
  • 50:€0.8419
  • 100:€0.8099
  • 500:€0.7799
  • 1000:€0.7519
FQI4N80TU
DISTI # 82C4155		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.9A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 1:$2.3900
  • 10:$1.8500
  • 100:$1.4400
  • 1000:$0.9570
  • 2000:$0.9500
  • 10000:$0.8950
  • 24000:$0.8680
  • 50000:$0.8470
FQI4N80TU
DISTI # 512-FQI4N80TU		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		797
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9910
  • 2500:$0.9230
  • 5000:$0.8890
FQI4N80TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		1550
  • 1000:$1.3000
  • 500:$1.3700
  • 100:$1.4300
  • 25:$1.4900
  • 1:$1.6000
Bild Teil # Beschreibung
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Mfr.#: FQI4N90TU

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FQI4N80TU

Mfr.#: FQI4N80TU

OMO.#: OMO-FQI4N80TU

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Mfr.#: FQI4N20TU

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Mfr.#: FQI4N80C

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Mfr.#: FQI4N80TUFSC

OMO.#: OMO-FQI4N80TUFSC-1190

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Mfr.#: FQI4P40

OMO.#: OMO-FQI4P40-1190

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FQI4P40TUFSC

Mfr.#: FQI4P40TUFSC

OMO.#: OMO-FQI4P40TUFSC-1190

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Verfügbarkeit
Aktie:
212
Auf Bestellung:
2195
Menge eingeben:
Der aktuelle Preis von FQI4N80TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,69 $
1,69 $
10
1,44 $
14,40 $
100
1,15 $
115,00 $
500
1,01 $
505,00 $
1000
0,84 $
837,00 $
2000
0,78 $
1 560,00 $
5000
0,75 $
3 755,00 $
10000
0,72 $
7 220,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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