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IRFB7434PBF

IRFB7434PBF
Mfr. #:
IRFB7434PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB7434PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB7434PBF DatasheetIRFB7434PBF Datasheet (P4-P6)IRFB7434PBF Datasheet (P7-P9)IRFB7434PBF Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRFB7434PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
317 A
Rds On - Drain-Source-Widerstand:
1.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
324 nC
Pd - Verlustleistung:
294 W
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001575514
Gewichtseinheit:
0.211644 oz
Tags
IRFB7434, IRFB743, IRFB74, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 1.6 mOhm 324 nC HEXFET® Power Mosfet - TO-220-3
***Components
N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB Infineon IRFB7434PBF
***p One Stop Global
Trans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 40V 317A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Drive: standard Housing type: TO-220AB Polarity: N Power dissipation: 294 W
*** Source Electronics
MOSFET N CH 40V 195A TO220
***ronik
N-CH 40V 317A 1,6mOhm TO220-3 RoHSconf
***ukat
N-Ch 40V 195A 294W 0,0116R TO220AB
***ark
MOSFET, N CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N-CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:294W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, N-CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:294W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFB7434PBF
DISTI # 30205816		Infineon Technologies AGTrans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		400
  • 550:$0.8142
  • 450:$0.8389
IRFB7434PBF
DISTI # 30618016		Infineon Technologies AGTrans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		250
  • 200:$1.4917
  • 100:$1.6830
  • 50:$2.0017
  • 10:$2.0655
  • 7:$3.9907
IRFB7434PBF
DISTI # IRFB7434PBF-ND		Infineon Technologies AGMOSFET N CH 40V 195A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		994In Stock
  • 1000:$1.3545
  • 500:$1.6049
  • 100:$2.0222
  • 50:$2.2310
  • 1:$2.7300
IRFB7434PBF
DISTI # C1S322000489048		Infineon Technologies AGTrans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		250
  • 200:$1.1700
  • 100:$1.3200
  • 50:$1.5700
  • 10:$1.6200
  • 1:$3.1300
IRFB7434PBF
DISTI # C1S322000489057		Infineon Technologies AGTrans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		400
  • 200:$1.4600
  • 100:$1.5900
  • 50:$1.9300
  • 10:$2.1700
  • 1:$5.9600
IRFB7434PBF
DISTI # V99:2348_13890214		Infineon Technologies AGTrans MOSFET N-CH Si 40V 317A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 500:$1.1597
  • 100:$1.3262
  • 10:$1.5744
  • 1:$1.7803
IRFB7434PBF
DISTI # IRFB7434PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 317A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7434PBF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 650
  • 450:$0.8739
  • 550:$0.8429
  • 1000:$0.8119
  • 2250:$0.7849
  • 4500:$0.7709
IRFB7434PBF
DISTI # IRFB7434PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 317A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRFB7434PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 5000
  • 1000:$1.0893
  • 2000:$1.0445
  • 3000:$1.0304
  • 5000:$0.9902
  • 10000:$0.9776
  • 25000:$0.9531
  • 50000:$0.9299
IRFB7434PBF
DISTI # SP001575514		Infineon Technologies AGTrans MOSFET N-CH 40V 317A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001575514)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 900
  • 1:€1.2369
  • 10:€0.9619
  • 25:€0.8919
  • 50:€0.8639
  • 100:€0.8499
  • 500:€0.8419
  • 1000:€0.8309
IRFB7434PBF
DISTI # 53W9268		Infineon Technologies AGMOSFET Transistor, N Channel, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V RoHS Compliant: Yes745
  • 1:$2.5000
  • 10:$2.1500
IRFB7434PBF
DISTI # 942-IRFB7434PBF		Infineon Technologies AGMOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC
RoHS: Compliant		1691
  • 1:$2.2400
  • 10:$1.9000
  • 100:$1.5200
  • 500:$1.3300
IRFB7434PBF
DISTI # 7769175P		Infineon Technologies AGSTRONGIRFET MOSFET N-CH 40V 195A TO220AB, TU14
  • 25:£1.0700
  • 50:£1.0100
  • 100:£0.9700
  • 200:£0.9500
IRFB7434PBF
DISTI # 7769175		Infineon Technologies AGSTRONGIRFET MOSFET N-CH 40V 195A TO220AB, EA8
  • 1:£2.0000
  • 25:£1.0700
  • 50:£1.0100
  • 100:£0.9700
  • 200:£0.9500
IRFB7434PBF
DISTI # IRFB7434PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,317A,294W,TO220AB117
  • 1:$2.6800
  • 3:$2.3600
  • 10:$1.9700
  • 100:$1.6700
IRFB7434PBF
DISTI # IRFB7434PBF		Infineon Technologies AGN-Ch 40V 195A 294W 0,0016R TO220AB
RoHS: Compliant		510
  • 10:€1.2200
  • 50:€0.9172
  • 200:€0.8172
  • 500:€0.7868
IRFB7434PBF
DISTI # TMOSP12141		Infineon Technologies AGN-CH 40V 317A 1,6mOhm TO220-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 1000:$1.0984
IRFB7434PBFInternational Rectifier 
RoHS: Compliant		Europe - 123
    IRFB7434PBF
    DISTI # XSLY00000000937    		INFINEON/IRTO-220AB
    RoHS: Compliant    		3276
    • 700:$1.0300
    • 3276:$0.9600
    IRFB7434PBF
    DISTI # 2253785    		Infineon Technologies AGMOSFET, N-CH, 40V, 195A, TO-220AB
    RoHS: Compliant    		745
    • 1:$3.5500
    • 10:$3.0100
    • 100:$2.4100
    • 500:$2.1000
    IRFB7434PBF
    DISTI # 2253785    		Infineon Technologies AGMOSFET, N-CH, 40V, 195A, TO-220AB
    RoHS: Compliant    		745
    • 1:£1.9300
    • 10:£1.0200
    • 100:£0.9600
    • 250:£0.9480
    • 500:£0.9370
    Bild Teil # Beschreibung
    IRL40B209

    Mfr.#: IRL40B209

    OMO.#: OMO-IRL40B209

    		 MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl
    VS-30CTQ060-M3

    Mfr.#: VS-30CTQ060-M3

    OMO.#: OMO-VS-30CTQ060-M3

    		 Schottky Diodes & Rectifiers 60V 2 x 15A IF C.A. TO-220AB
    TPS560430YFDBVT

    Mfr.#: TPS560430YFDBVT

    OMO.#: OMO-TPS560430YFDBVT

    		 Switching Voltage Regulators NIXON TPS560430YFDBVR DC-DC CONVERTER
    ESL107M063AG8AA

    Mfr.#: ESL107M063AG8AA

    OMO.#: OMO-ESL107M063AG8AA

    		 Aluminum Electrolytic Capacitors - Radial Leaded 63V 100uF 105C 10k Hour Radial
    UHW1J561MHD1TO

    Mfr.#: UHW1J561MHD1TO

    OMO.#: OMO-UHW1J561MHD1TO

    		 Aluminum Electrolytic Capacitors - Radial Leaded 63V 560uF 20%
    TPS560430YFDBVT

    Mfr.#: TPS560430YFDBVT

    OMO.#: OMO-TPS560430YFDBVT-TEXAS-INSTRUMENTS

    		 NIXON TPS560430YFDBVR DC-DC CONVERTER
    PMR100HZPJU6L0

    Mfr.#: PMR100HZPJU6L0

    OMO.#: OMO-PMR100HZPJU6L0-ROHM-SEMI

    		 RES 0.006 OHM 5% 2W 2512
    VS-30CTQ060-M3

    Mfr.#: VS-30CTQ060-M3

    OMO.#: OMO-VS-30CTQ060-M3-VISHAY

    		 DIODE ARRAY SCHOTTKY 60V TO220AB
    ESR18EZPJ1R2

    Mfr.#: ESR18EZPJ1R2

    OMO.#: OMO-ESR18EZPJ1R2-ROHM-SEMI

    		 RES SMD 1.2 OHM 5% 1/2W 1206
    IRL40B209

    Mfr.#: IRL40B209

    OMO.#: OMO-IRL40B209-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 40V 195A
    Verfügbarkeit
    Aktie:
    631
    Auf Bestellung:
    2614
    Menge eingeben:
    Der aktuelle Preis von IRFB7434PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,23 $
    2,23 $
    10
    1,89 $
    18,90 $
    100
    1,51 $
    151,00 $
    500
    1,32 $
    660,00 $
    1000
    1,10 $
    1 100,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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