PartNumber | IRFB7430PBF | IRFB7434GPBF | IRFB7430GPBF |
Description | MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB | MOSFET N CH 40V 195A TO220AB |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 409 A | 317 A | - |
Rds On Drain Source Resistance | 1.3 mOhms | 1.25 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 460 nC | 324 nC | - |
Pd Power Dissipation | 375 W | 294 W | - |
Tradename | StrongIRFET | StrongIRFET | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | 15.65 mm | - |
Length | 10 mm | 10 mm | - |
Width | 4.4 mm | 4.4 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001551786 | SP001577770 | - |
Unit Weight | 0.211644 oz | 0.063493 oz | - |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 211 S | - |
Fall Time | - | 68 ns | - |
Rise Time | - | 68 ns | - |
Typical Turn Off Delay Time | - | 115 ns | - |
Typical Turn On Delay Time | - | 24 ns | - |