SI4346DY-T1-GE3

Mfr. #:: SI4346DY-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4346DY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4346DY-T1-GE3 Datasheet SI4346DY-T1-GE3 Datasheet (P4-P6)SI4346DY-T1-GE3 Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI4

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: SI4346DY-GE3

Gewichtseinheit:: 0.006596 oz

Tags: SI4346D, SI4346, SI434, SI43, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4346DY-T1-GE3 Beschreibung

***et: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.31W

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4346DY-T1-GE3 DISTI # SI4346DY-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.4158
SI4346DY-T1-GE3 DISTI # 15R4985	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes	0	1:$0.3700 2500:$0.3680 5000:$0.3570 10000:$0.3430
SI4346DY-T1-GE3 DISTI # 84R8044	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes	0	1:$1.0200 10:$0.9610 25:$0.8710 50:$0.7850 100:$0.7120 250:$0.5970 500:$0.5280
SI4346DY-T1-GE3 DISTI # 781-SI4346DY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS: Compliant	0
SI4346DY-T1-GE3 DISTI # 1867186	Vishay Intertechnologies	N CH MOSFET RoHS: Compliant	0	2500:£0.4670

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
	Mfr.#: SI4346DY-T1 OMO.#: OMO-SI4346DY-T1-1190	Neu und Original
	Mfr.#: SI4346DY-T1-E3 OMO.#: OMO-SI4346DY-T1-E3-VISHAY	MOSFET N-CH 30V 5.9A 8-SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von SI4346DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI4346D 3
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SI434 14
SI43 161
SI4 2994

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SI4346DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes