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SI4346DY-T1-E3

SI4346DY-T1-E3
Mfr. #:
SI4346DY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 5.9A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4346DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4346DY-T1-E3 DatasheetSI4346DY-T1-E3 Datasheet (P4-P6)SI4346DY-T1-E3 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI4346DY-E3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.31W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
5.9A (Ta)
Rds-On-Max-Id-Vgs
23 mOhm @ 8A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
10nC @ 4.5V
Pd-Verlustleistung
1.31 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
5.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
23 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
9 ns
Kanal-Modus
Erweiterung
Tags
SI4346D, SI4346, SI434, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
SI4346DY-T1-E3
DISTI # V72:2272_09216464		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
RoHS: Compliant		1125
  • 75000:$0.3116
  • 30000:$0.3146
  • 15000:$0.3175
  • 6000:$0.3205
  • 3000:$0.3234
  • 1000:$0.3264
  • 500:$0.3585
  • 250:$0.3923
  • 100:$0.4267
  • 50:$0.4351
  • 25:$0.4834
  • 10:$0.4928
  • 1:$0.5231
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1591In Stock
  • 1000:$0.3577
  • 500:$0.4423
  • 100:$0.5903
  • 10:$0.7590
  • 1:$0.8700
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1591In Stock
  • 1000:$0.3577
  • 500:$0.4423
  • 100:$0.5903
  • 10:$0.7590
  • 1:$0.8700
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4346DY-T1-E3
    DISTI # 25790090    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
    RoHS: Compliant    		1125
    • 15000:$0.3413
    • 6000:$0.3445
    • 3000:$0.3477
    • 1000:$0.3509
    • 500:$0.3854
    • 250:$0.4217
    • 100:$0.4587
    • 50:$0.4677
    • 25:$0.5197
    • 19:$0.5298
    SI4346DY-T1-E3
    DISTI # 19257946    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
    RoHS: Compliant    		995
    • 167:$0.3750
    SI4346DY-T1-E3
    DISTI # 57J5650    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes995
    • 1:$0.3000
    • 10:$0.3000
    • 25:$0.3000
    • 50:$0.3000
    • 100:$0.3000
    • 250:$0.3000
    • 500:$0.3000
    SI4346DY-T1-E3.
    DISTI # 30AC0153    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No0
      SI4346DY-T1-E3
      DISTI # 70026210      		Vishay SiliconixN-CHANNEL 30-V (D-S) MOSFET
      RoHS: Compliant      		0
      • 2500:$0.4400
      • 5000:$0.4200
      • 7500:$0.3900
      SI4346DY-T1-E3
      DISTI # 781-SI4346DY-T1-E3      		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
      RoHS: Compliant      		0
        SI4346DY-T1-E3Vishay SiliconixMOSFET Transistor, N-Channel, SO20
        • 1:$1.7500
        SI4346DY-T1-E3--- 7
          SI4346DY-T1-E3Vishay Intertechnologies 6969
            SI4346DYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
            RoHS: Compliant            		Europe - 2500
              SI4346DY-T1-E3  281
                SI4346DY-T1-E3
                DISTI # 1839003                		Vishay IntertechnologiesMOSFET,N CH,30V,5.9A,8-SOIC
                RoHS: Compliant                		995
                • 1000:£0.3290
                • 500:£0.3360
                • 100:£0.3430
                • 50:£0.4530
                • 5:£0.5100
                Bild Teil # Beschreibung
                SI4346DY-T1-GE3

                Mfr.#: SI4346DY-T1-GE3

                OMO.#: OMO-SI4346DY-T1-GE3

                		 MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
                SI4346DY-T1-GE3

                Mfr.#: SI4346DY-T1-GE3

                OMO.#: OMO-SI4346DY-T1-GE3-VISHAY

                		 RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
                SI4346DY-T1

                Mfr.#: SI4346DY-T1

                OMO.#: OMO-SI4346DY-T1-1190

                		 Neu und Original
                SI4346DY-T1-E3

                Mfr.#: SI4346DY-T1-E3

                OMO.#: OMO-SI4346DY-T1-E3-VISHAY

                		 MOSFET N-CH 30V 5.9A 8-SOIC
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                2500
                Menge eingeben:
                Der aktuelle Preis von SI4346DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                0,45 $
                0,45 $
                10
                0,43 $
                4,28 $
                100
                0,40 $
                40,50 $
                500
                0,38 $
                191,25 $
                1000
                0,36 $
                360,00 $
                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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