OMO ElectronicOMO Electronic
Expand menu
0 Wagen

IPB35N10S3L-26

IPB35N10S3L-26
Mfr. #:
IPB35N10S3L-26
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB35N10S3L-26 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB35N10S3L-26 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
20.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
39 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
71 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS-T
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
6 ns
Teil # Aliase:
IPB35N10S3L26ATMA1 IPB35N1S3L26XT SP000776044
Gewichtseinheit:
0.139332 oz
Tags
IPB35N10, IPB35N, IPB35, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB35N10S3L26ATMA1
DISTI # V72:2272_06384799		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 500:$0.8098
  • 250:$0.8979
  • 100:$0.9339
  • 25:$1.1655
  • 10:$1.2365
  • 1:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.7091
IPB35N10S3L26ATMA1
DISTI # 33079428		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.5674
IPB35N10S3L26ATMA1
DISTI # 26195596		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 12:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6019
  • 2000:$0.6249
  • 1000:$0.6479
IPB35N10S3L26ATMA1
DISTI # SP000776044		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.5919
  • 6000:€0.6319
  • 4000:€0.6949
  • 2000:€0.7779
  • 1000:€0.9969
IPB35N10S3L26ATMA1
DISTI # 34AC1657		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes2039
  • 500:$0.8650
  • 250:$0.9210
  • 100:$0.9780
  • 50:$1.0800
  • 25:$1.1700
  • 10:$1.2700
  • 1:$1.4800
IPB35N10S3L26ATMA1
DISTI # 726-IPB35N10S3L26ATM		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1442
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26
DISTI # 726-IPB35N10S3L-26		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1110
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 35A I(D), 100V, 0.0322OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB248
  • 186:$0.7290
  • 70:$0.8100
  • 1:$1.6200
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263
RoHS: Compliant		2024
  • 100:$1.2800
  • 25:$1.5700
  • 5:$1.8100
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-2632039
  • 500:£0.6540
  • 250:£0.6960
  • 100:£0.7380
  • 10:£1.0100
  • 1:£1.2800
Bild Teil # Beschreibung
12101C155KAT2A

Mfr.#: 12101C155KAT2A

OMO.#: OMO-12101C155KAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 1.5uF X7R 1210 10%
MMSZ18ET1G

Mfr.#: MMSZ18ET1G

OMO.#: OMO-MMSZ18ET1G

 Zener Diodes 18V 500mW
08053C475KAT2A

Mfr.#: 08053C475KAT2A

OMO.#: OMO-08053C475KAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V 4.7uF X7R 0805 10%TOL
MLZ2012N100LT000

Mfr.#: MLZ2012N100LT000

OMO.#: OMO-MLZ2012N100LT000

 Fixed Inductors 10 UH 25%
NA5743-ALB

Mfr.#: NA5743-ALB

OMO.#: OMO-NA5743-ALB-1190

 Transformer, for LT8584, SMT, RoHS
08053C475KAT2A

Mfr.#: 08053C475KAT2A

OMO.#: OMO-08053C475KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 4.7uF 10% X7R 0805 SIZE
MLZ2012N100LT000

Mfr.#: MLZ2012N100LT000

OMO.#: OMO-MLZ2012N100LT000-TDK

 Fixed Inductors 10 UH 25%
352068RJT

Mfr.#: 352068RJT

OMO.#: OMO-352068RJT-TE-CONNECTIVITY-AMP

 Thick Film Resistors - SMD 68Ohms 1W 200V
NA6252-ALD

Mfr.#: NA6252-ALD

OMO.#: OMO-NA6252-ALD-1190

 Audio Transformers / Signal Transformers NA6252 12W 0.01Ohms For LT8585
C2012X7R1H225K125AC

Mfr.#: C2012X7R1H225K125AC

OMO.#: OMO-C2012X7R1H225K125AC-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 2.2uF 50volts X7R 10%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB35N10S3L-26 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,47 $
1,47 $
10
1,26 $
12,60 $
100
0,97 $
96,80 $
500
0,86 $
428,00 $
Beginnen mit
Neueste Produkte
  • XDPL8218 Voltage Flyback IC
    XDPL8218 Voltage Flyback IC
    Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
  • LMD and LMS Modular Connectors
    LMD and LMS Modular Connectors
    LMD and LMS modular connectors from Amphenol eliminate costly PC board and associated hardware therefore reducing assembly and production costs.
  • XC6216 Series Voltage Regulator
    XC6216 Series Voltage Regulator
    Torex's XC6216 series voltage regulator with a maximum output current of 150 mA and 28 V operating voltage used in a variety of consumer products.
  • Compare IPB35N10S3L-26
    Compare IPB35N10S3L-26
    IPB35N10S3L26 vs IPB35N10S3L263N10L26 vs IPB35N10S3L26ATMA1
  • TLF502x1EL Step-Down DC / DC
    TLF502x1EL Step-Down DC / DC
    Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
  • 600 V CoolMOS™ P7 Power Transistors
    600 V CoolMOS™ P7 Power Transistors
    Infineon‘s 600 V CoolMOS™ P7 series SJ MOSFET in TO-247 4-pin packaging with asymmetric leads.
More Newest Products
Top