 | |  | |
| PartNumber | IPB35N10S3L-26 | IPB35N12S3L26ATMA1 | IPB35N10S3L26ATMA1 |
| Description | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | MOSFET N-CHANNEL 100+ | MOSFET N-CH TO263-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 20.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 39 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-T | - | XPB35N10 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | IPB35N10S3L26ATMA1 IPB35N1S3L26XT SP000776044 | IPB35N12S3L-26 SP001398600 | - |
| Unit Weight | 0.139332 oz | 0.077603 oz | - |
| Moisture Sensitive | - | Yes | - |
| Part Aliases | - | - | IPB35N10S3L-26 IPB35N10S3L26XT SP000776044 |
| Package Case | - | - | TO-263-3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB35N10S3L-26 | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | |
| IPB35N12S3L26ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPB35N10S3L26ATMA1 | MOSFET N-CH TO263-3 | ||
| IPB35N12S3L26ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPB35CN10NG | Neu und Original | ||
| IPB35N10S3L-26 | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | ||
| IPB35N10S3L-26(3N10L26) | Neu und Original |