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FGP10N60UNDF

FGP10N60UNDF
Mfr. #:
FGP10N60UNDF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V 10A NPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGP10N60UNDF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGP10N60UNDF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.3 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
10 A
Pd - Verlustleistung:
139 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FGP10N60UNDF
Verpackung:
Rohr
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
+/- 10 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Gewichtseinheit:
0.063493 oz
Tags
FGP10N, FGP10, FGP1, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 20A 139000mW 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
FGP10N60UNDF Series 600 V 20 A N-Ch Short Circuit Rated IGBT - TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***ical
Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF19NC60HD Series 600 V 16 A Flange Mount Very Fast IGBT - TO-220FP
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 9A TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail
***ark
RAIL / 600V,14A,UFS SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***ical
Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
***ow.cn
Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube
*** Electronics
ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins
***ark
Igbt, Single, 600V, 24A, To-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB15N60R2FG
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Teil # Mfg. Beschreibung Aktie Preis
FGP10N60UNDF
DISTI # V36:1790_06359745		ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 1:$2.0813
FGP10N60UNDF
DISTI # FGP10N60UNDF-ND		ON SemiconductorIGBT 600V 20A 139W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		756In Stock
  • 5600:$0.9100
  • 3200:$0.9214
  • 800:$1.1944
  • 100:$1.4537
  • 25:$1.7064
  • 10:$1.8090
  • 1:$2.0100
FGP10N60UNDF
DISTI # 32373636		ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 8:$1.8921
FGP10N60UNDF
DISTI # 31022398		ON SemiconductorNPTPIGBT TO220 10A 600V800
  • 1000:$0.9336
  • 800:$1.1187
FGP10N60UNDF
DISTI # FGP10N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.8069
  • 500:€0.8369
  • 100:€0.8689
  • 50:€0.9039
  • 25:€0.9419
  • 10:€1.0269
  • 1:€1.1299
FGP10N60UNDF
DISTI # FGP10N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.8019
  • 4800:$0.8219
  • 3200:$0.8329
  • 1600:$0.8439
  • 800:$0.8489
FGP10N60UNDF
DISTI # 46W4343		ON SemiconductorNPTPIGBT TO220 10A 600V / TUBE0
  • 10000:$0.8850
  • 2500:$0.9240
  • 1000:$1.0000
  • 500:$1.2000
  • 100:$1.3600
  • 10:$1.6800
  • 1:$2.0700
FGP10N60UNDF
DISTI # 512-FGP10N60UNDF		ON SemiconductorIGBT Transistors 600V 10A NPT IGBT
RoHS: Compliant		1192
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1300
  • 1000:$0.9430
Bild Teil # Beschreibung
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TD310ID

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OMO.#: OMO-TD310ID

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Mfr.#: 1N4148

OMO.#: OMO-1N4148

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 LDO Voltage Regulators ULTRA LOW NOISE 0.5A LDO WITH PG
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OMO.#: OMO-VLS3012CX-100M-1

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RC0603FR-075R11L

Mfr.#: RC0603FR-075R11L

OMO.#: OMO-RC0603FR-075R11L

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Mfr.#: ADS131A04IPBSR

OMO.#: OMO-ADS131A04IPBSR-TEXAS-INSTRUMENTS

 Data Converter ICs - Various Analog Front End - AFE 4-Channel Analog Front-End for Power Monitoring, Control, and Protection 32-TQFP -40 to 125
OPA374AIDBVR

Mfr.#: OPA374AIDBVR

OMO.#: OMO-OPA374AIDBVR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 6.5MHz 585uA Rail-2-Rail I/O CMOS
TD310ID

Mfr.#: TD310ID

OMO.#: OMO-TD310ID-STMICROELECTRONICS

 Gate Drivers Triple IGBT/MOS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FGP10N60UNDF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,62 $
1,62 $
10
1,38 $
13,80 $
100
1,10 $
110,00 $
500
0,97 $
483,00 $
1000
0,80 $
800,00 $
2500
0,79 $
1 972,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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