 |  | | |
| PartNumber | FGP10N60UNDF | FGP10N60 | FGP10N60RUFD |
| Description | IGBT Transistors 600V 10A NPT IGBT | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.3 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 10 A | - | - |
| Pd Power Dissipation | 139 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FGP10N60UNDF | - | - |
| Packaging | Tube | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | +/- 10 uA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGP10N60UNDF | IGBT Transistors 600V 10A NPT IGBT | |
ON Semiconductor |
FGP10N60UNDF | IGBT Transistors 600V 10A NPT IGBT | |
| FGP10N60 | Neu und Original | ||
| FGP10N60RUFD | Neu und Original |