SISS61DN-T1-GE3

SISS61DN-T1-GE3
Mfr. #:
SISS61DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS61DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS61DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SiSS61DN-T1-GE3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
- 20 V
Id - Kontinuierlicher Drainstrom:
- 111.9 A
Rds On - Drain-Source-Widerstand:
2.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
- 0.9 V
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
154 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Marke:
Vishay / Siliconix
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
90 ns
Typische Einschaltverzögerungszeit:
15 ns
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.3851
  • 6000:$0.4001
  • 3000:$0.4212
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3
Vishay IntertechnologiesTransistor MOSFET P-CH 20V 111.9A 8-Pin PowerPAK 1212-S T/R (Alt: SISS61DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.3839
  • 18000:€0.4009
  • 12000:€0.4539
  • 6000:€0.5599
  • 3000:€0.7809
SISS61DN-T1-GE3
DISTI # 02AH2522
Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-111.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,RoHS Compliant: Yes50
  • 500:$0.5500
  • 250:$0.5950
  • 100:$0.6400
  • 50:$0.7050
  • 25:$0.7700
  • 10:$0.8340
  • 1:$1.0100
SISS61DN-T1-GE3
DISTI # 78-SISS61DN-T1-GE3
Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
RoHS: Compliant
0
  • 1:$1.0000
  • 10:$0.8260
  • 100:$0.6340
  • 500:$0.5450
  • 1000:$0.4300
  • 3000:$0.4020
  • 6000:$0.3820
  • 9000:$0.3670
SISS61DN-T1-GE3Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8SAmericas -
    SISS61DN-T1-GE3
    DISTI # 3050577
    Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C
    RoHS: Compliant
    50
    • 1000:$0.5310
    • 500:$0.6060
    • 250:$0.6850
    • 100:$0.7330
    • 10:$0.9090
    • 1:$1.0600
    SISS61DN-T1-GE3
    DISTI # 3050577
    Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C50
    • 500:£0.4110
    • 250:£0.4560
    • 100:£0.5000
    • 10:£0.7190
    • 1:£0.9210
    Bild Teil # Beschreibung
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106

    MOSFET ST3 20V/8V PCH Power Trench Mosfet
    FDMC6686P

    Mfr.#: FDMC6686P

    OMO.#: OMO-FDMC6686P-ON-SEMICONDUCTOR

    IGBT Transistors MOSFET PT8P 20/8V power PQFN33 with cu wire
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106-ON-SEMICONDUCTOR

    ST3 20V/8V PCH ERTREN
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1989
    Menge eingeben:
    Der aktuelle Preis von SISS61DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,00 $
    1,00 $
    10
    0,83 $
    8,26 $
    100
    0,63 $
    63,40 $
    500
    0,54 $
    272,50 $
    1000
    0,43 $
    430,00 $
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