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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB039N10N3GATMA1 DISTI # V36:1790_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # V72:2272_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB039N10N3GXT DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB039N10N3GATMA1 DISTI # 47W3465 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
| IPB039N10N3 G DISTI # 726-IPB039N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 2993 |
|
| IPB039N10N3GATMA1 DISTI # 726-IPB039N10N3GATMA | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # 1655690 | Infineon Technologies AG | IPB039N10N3GATMA1 N-Channel MOSFET, 160 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon, RL | 0 |
|
| IPB039N10N3GATMA1 DISTI # 8275299 | Infineon Technologies AG | IPB039N10N3GATMA1 N-Channel MOSFET, 160 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon, PK | 1000 |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,160A,214W,PG-TO263-7 | 28 |
|
| IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 | 0 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1 |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
|
Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB039N10N3GE8187ATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
|
|
Mfr.#: IPB039N10N3GATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
|
Mfr.#: IPB039N10N3GXT OMO.#: OMO-IPB039N10N3GXT-1190 |
Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) |
|
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Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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Mfr.#: IPB039N10N3GATMA OMO.#: OMO-IPB039N10N3GATMA-1190 |
Neu und Original |
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Mfr.#: IPB039N10N3GATMA1 , 2SD1 |
Neu und Original |
|
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Mfr.#: IPB039N10N3GE8197ATMA1 |
Neu und Original |
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Mfr.#: IPB039N10N3GE818XT OMO.#: OMO-IPB039N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 |