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IKW50N65EH5XKSA1

IKW50N65EH5XKSA1
Mfr. #:
IKW50N65EH5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKW50N65EH5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IKW50N65EH5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.65 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
275 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Verpackung:
Rohr
Höhe:
20.7 mm
Länge:
15.87 mm
Breite:
5.31 mm
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IKW50N65EH5 SP001257944
Gewichtseinheit:
0.213383 oz
Tags
IKW50N65E, IKW50N65, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 275000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:275W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Teil # Mfg. Beschreibung Aktie Preis
IKW50N65EH5XKSA1
DISTI # V99:2348_06378019		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube230
  • 500:$3.4010
  • 250:$3.7630
  • 100:$4.0730
  • 10:$4.6620
  • 1:$6.0862
IKW50N65EH5XKSA1
DISTI # V36:1790_06378019		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.4530
  • 120000:$2.4590
  • 24000:$3.3440
  • 2400:$5.2350
  • 240:$5.5700
IKW50N65EH5XKSA1
DISTI # IKW50N65EH5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		206In Stock
  • 2640:$2.9485
  • 720:$3.6709
  • 240:$4.3122
  • 25:$4.9756
  • 10:$5.2630
  • 1:$5.8600
IKW50N65EH5XKSA1
DISTI # 31343989		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube230
  • 3:$6.0862
IKW50N65EH5XKSA1
DISTI # IKW50N65EH5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65EH5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.5900
  • 1440:$2.6900
  • 960:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IKW50N65EH5XKSA1
DISTI # SP001257944		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001257944)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.9900
IKW50N65EH5XKSA1
DISTI # 34AC1635		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:275W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes240
  • 500:$3.5200
  • 250:$3.9300
  • 100:$4.1400
  • 50:$4.3500
  • 25:$4.5700
  • 10:$4.7800
  • 1:$5.6300
IKW50N65EH5XKSA1
DISTI # 726-IKW50N65EH5XKSA1		Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
RoHS: Compliant		0
  • 1:$5.5700
  • 10:$4.7300
  • 100:$4.1000
  • 250:$3.8900
  • 500:$3.4900
IKW50N65EH5XKSA1
DISTI # 2781035		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-24710
  • 500:£2.6600
  • 250:£2.9700
  • 100:£3.1300
  • 10:£3.6100
  • 1:£4.7100
IKW50N65EH5XKSA1
DISTI # 2781035		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		240
  • 1000:$3.9800
  • 500:$4.0500
  • 250:$4.2700
  • 100:$4.5200
  • 10:$5.1200
  • 1:$5.4600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IKW50N65EH5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,57 $
5,57 $
10
4,73 $
47,30 $
100
4,10 $
410,00 $
250
3,89 $
972,50 $
500
3,49 $
1 745,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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