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| PartNumber | IKW50N65ES5 | IKW50N65EH5XKSA1 | IKW50N65EH5 |
| Description | IGBT Transistors Trenchstop 5 IGBT | IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.35 V | 1.65 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 80 A | 80 A | - |
| Pd Power Dissipation | 274 W | 275 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | TRENCHSTOP 5 S5 | TRENCHSTOP 5 H5 | - |
| Packaging | Tube | Tube | - |
| Height | 20.7 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Operating Temperature Range | - 40 C to + 175 C | - | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 240 | 240 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | TRENCHSTOP | TRENCHSTOP | - |
| Part # Aliases | IKW50N65ES5XKSA1 SP001319682 | IKW50N65EH5 SP001257944 | - |
| Unit Weight | 1.340411 oz | 0.213383 oz | - |