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IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1
Mfr. #:
IPG20N06S2L50AATMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPG20N06S2L50AATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
Automotive, AEC-Q101, OptiMOS
Verpackung
Band & Spule (TR)
Teil-Aliasnamen
IPG20N06S2L-50A SP001023842
Montageart
SMD/SMT
Paket-Koffer
8-PowerVDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 175°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
PG-TDSON-8-10
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
51W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
55V
Eingangskapazität-Ciss-Vds
560pF @ 25V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
20A
Rds-On-Max-Id-Vgs
50 mOhm @ 15A, 10V
Vgs-th-Max-Id
2V @ 19μA
Gate-Lade-Qg-Vgs
17nC @ 10V
Pd-Verlustleistung
51 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
3 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
20 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Widerstand
50 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
15 ns
Typische-Einschaltverzögerungszeit
2 ns
Qg-Gate-Ladung
13 nC
Kanal-Modus
Erweiterung
Tags
IPG20N06S2, IPG20N06, IPG20N0, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V, Dual N-Ch, 50 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™, PG-TDSON-8, RoHS
***ical
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
Teil # Mfg. Beschreibung Aktie Preis
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6169
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S2L50AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6069
  • 10000:$0.5849
  • 20000:$0.5639
  • 30000:$0.5449
  • 50000:$0.5349
IPG20N06S2L50AATMA1
DISTI # SP001023842		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023842)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.9489
  • 10000:€0.7959
  • 20000:€0.6649
  • 30000:€0.5789
  • 50000:€0.5429
IPG20N06S2L50AATMA1
DISTI # 726-IPG20N06S2L50AAT		Infineon Technologies AGMOSFET N-Ch 55V 20A TDSON-8
RoHS: Compliant		0
  • 1:$1.3800
  • 10:$1.1800
  • 100:$0.9070
  • 500:$0.8020
  • 1000:$0.6330
  • 5000:$0.5610
  • 10000:$0.5400
Bild Teil # Beschreibung
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IPG20N06S2L50AATMA1

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Mfr.#: IPG20N06S4L14ATMA2

OMO.#: OMO-IPG20N06S4L14ATMA2-INFINEON-TECHNOLOGIES

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Mfr.#: IPG20N06S4L26AATMA1-CUT TAPE

OMO.#: OMO-IPG20N06S4L26AATMA1-CUT-TAPE-1190

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Mfr.#: IPG20N06S2L-35

OMO.#: OMO-IPG20N06S2L-35-1190

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Mfr.#: IPG20N06S2L65ATMA

OMO.#: OMO-IPG20N06S2L65ATMA-1190

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OMO.#: OMO-IPG20N06S3L-35-INFINEON-TECHNOLOGIES

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Mfr.#: IPG20N06S415ATMA1

OMO.#: OMO-IPG20N06S415ATMA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPG20N06S4-15

OMO.#: OMO-IPG20N06S4-15-126

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IPG20N06S2L50AATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,80 $
0,80 $
10
0,76 $
7,62 $
100
0,72 $
72,21 $
500
0,68 $
341,00 $
1000
0,64 $
641,90 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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