SIS435DNT-T1-GE3

SIS435DNT-T1-GE3
Mfr. #:
SIS435DNT-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 20V 30A 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS435DNT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS435DNT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIS43, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS435DNT-T1-GE3 P-channel MOSFET Transistor; 22 A; 20 V; 8-Pin PowerPAK 1212
***ure Electronics
Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.0044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SIS435DNT-T1-GE3
DISTI # V72:2272_09216159
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 25:$0.5925
  • 10:$0.5969
  • 1:$0.6835
SIS435DNT-T1-GE3
DISTI # V36:1790_09216159
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.2727
  • 1500000:$0.2728
  • 300000:$0.2793
  • 30000:$0.2885
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Cut Tape (CT)
2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Digi-Reel®
2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.2660
  • 6000:$0.2700
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # 31610622
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 26:$0.5925
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2564
  • 18000:$0.2635
  • 12000:$0.2710
  • 6000:$0.2825
  • 3000:$0.2911
SIS435DNT-T1-GE3.
DISTI # 61AC1928
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-22A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:39W RoHS Compliant: Yes
RoHS: Compliant
0
  • 50000:$0.2580
  • 30000:$0.2700
  • 20000:$0.2900
  • 10000:$0.3100
  • 5000:$0.3360
  • 1:$0.3440
SIS435DNT-T1-GE3
DISTI # 70616573
Vishay SiliconixSIS435DNT-T1-GE3 P-channel MOSFET Transistor,22 A,20 V,8-Pin PowerPAK 1212
RoHS: Compliant
0
  • 300:$0.4000
  • 600:$0.3600
  • 1500:$0.3200
  • 3000:$0.3100
SIS435DNT-T1-GE3
DISTI # 78-SIS435DNT-T1-GE3
Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
RoHS: Compliant
3598
  • 1:$0.7700
  • 10:$0.6570
  • 100:$0.5050
  • 500:$0.4090
  • 1000:$0.3250
  • 3000:$0.2900
  • 6000:$0.2700
  • 9000:$0.2660
SIS435DNT-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8TAmericas - 9000
  • 3000:$0.2880
  • 6000:$0.2700
  • 9000:$0.2640
  • 12000:$0.2560
Bild Teil # Beschreibung
SIS435DNT-T1-GE3

Mfr.#: SIS435DNT-T1-GE3

OMO.#: OMO-SIS435DNT-T1-GE3

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
SIS435DNT

Mfr.#: SIS435DNT

OMO.#: OMO-SIS435DNT-1190

Neu und Original
SIS435DNT-T1-GE3

Mfr.#: SIS435DNT-T1-GE3

OMO.#: OMO-SIS435DNT-T1-GE3-VISHAY

MOSFET P-CH 20V 30A 1212-8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von SIS435DNT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,38 $
0,38 $
10
0,36 $
3,65 $
100
0,35 $
34,55 $
500
0,33 $
163,15 $
1000
0,31 $
307,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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