SIS435DNT-T1-GE3

Mfr. #:: SIS435DNT-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIS435DNT-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIS435DNT-T1-GE3 Datasheet SIS435DNT-T1-GE3 Datasheet (P4-P6)SIS435DNT-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SIS435DNT-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 30 A

Rds On - Drain-Source-Widerstand:: 4.4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 900 mV

Vgs - Gate-Source-Spannung:: 8 V

Qg - Gate-Ladung:: 180 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 39 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET, PowerPAK

Verpackung:: Spule

Serie:: SIS

Transistortyp:: 1 P-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 55 S

Abfallzeit:: 30 ns

Produktart:: MOSFET

Anstiegszeit:: 30 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 100 ns

Typische Einschaltverzögerungszeit:: 40 ns

Tags: SIS43, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS435DNT-T1-GE3 Beschreibung

***ied Electronics & Automation: SIS435DNT-T1-GE3 P-channel MOSFET Transistor; 22 A; 20 V; 8-Pin PowerPAK 1212

***ure Electronics: Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.0044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes

SIS435DNT-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIS435DNT-T1-GE3 DISTI # V72:2272_09216159	Vishay Intertechnologies	Trans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1961	1000:$0.3030 500:$0.3752 250:$0.4633 100:$0.4653 25:$0.5925 10:$0.5969 1:$0.6835
SIS435DNT-T1-GE3 DISTI # V36:1790_09216159	Vishay Intertechnologies	Trans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.2727 1500000:$0.2728 300000:$0.2793 30000:$0.2885 3000:$0.2900
SIS435DNT-T1-GE3 DISTI # SIS435DNT-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 30A 1212-8 Min Qty: 1 Container: Cut Tape (CT)	2963In Stock	1000:$0.3296 500:$0.4120 100:$0.5212 10:$0.6800 1:$0.7700
SIS435DNT-T1-GE3 DISTI # SIS435DNT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 30A 1212-8 Min Qty: 1 Container: Digi-Reel®	2963In Stock	1000:$0.3296 500:$0.4120 100:$0.5212 10:$0.6800 1:$0.7700
SIS435DNT-T1-GE3 DISTI # SIS435DNT-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 30A 1212-8 Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.2660 6000:$0.2700 3000:$0.2900
SIS435DNT-T1-GE3 DISTI # 31610622	Vishay Intertechnologies	Trans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1961	1000:$0.3030 500:$0.3752 250:$0.4633 100:$0.4653 26:$0.5925
SIS435DNT-T1-GE3 DISTI # SIS435DNT-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2564 18000:$0.2635 12000:$0.2710 6000:$0.2825 3000:$0.2911
SIS435DNT-T1-GE3. DISTI # 61AC1928	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-22A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:39W RoHS Compliant: Yes RoHS: Compliant	0	50000:$0.2580 30000:$0.2700 20000:$0.2900 10000:$0.3100 5000:$0.3360 1:$0.3440
SIS435DNT-T1-GE3 DISTI # 70616573	Vishay Siliconix	SIS435DNT-T1-GE3 P-channel MOSFET Transistor,22 A,20 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	300:$0.4000 600:$0.3600 1500:$0.3200 3000:$0.3100
SIS435DNT-T1-GE3 DISTI # 78-SIS435DNT-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T RoHS: Compliant	3598	1:$0.7700 10:$0.6570 100:$0.5050 500:$0.4090 1000:$0.3250 3000:$0.2900 6000:$0.2700 9000:$0.2660
SIS435DNT-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T	Americas - 9000	3000:$0.2880 6000:$0.2700 9000:$0.2640 12000:$0.2560

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	Mfr.#: SIS443DN-T1-GE3 OMO.#: OMO-SIS443DN-T1-GE3	MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
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	Mfr.#: ERJ-2RKF1003X OMO.#: OMO-ERJ-2RKF1003X	Thick Film Resistors - SMD 0402 100Kohms 1% AEC-Q200
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	Mfr.#: DMT6007LFG-7 OMO.#: OMO-DMT6007LFG-7-DIODES	Trans MOSFET N-CH 60V 15A Automotive 8-Pin PowerDI EP T/R
	Mfr.#: 1812L110/33MR OMO.#: OMO-1812L110-33MR-LITTELFUSE	Resettable Fuses - PPTC PTC 33V 1.10A POLY SURF MOUNT
	Mfr.#: IRFZ48RSPBF OMO.#: OMO-IRFZ48RSPBF-VISHAY	MOSFET N-CH 60V 50A D2PAK
	Mfr.#: SIS443DN-T1-GE3 OMO.#: OMO-SIS443DN-T1-GE3-VISHAY	MOSFET P-CH 40V 35A PPAK 1212-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von SIS435DNT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,79 $~~; ~~0,79 $~~

10: ~~0,64 $~~; ~~6,38 $~~

100: ~~0,48 $~~; ~~48,50 $~~

500: ~~0,40 $~~; ~~200,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIS43 12
SIS4 92
SIS 843

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SIS435DNT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes