PartNumber | SIS430DN | SIS430DN-GE3 | SIS430DN-T1-GE3 |
Description | MOSFET N-CH 25V 35A PPAK 1212-8 | ||
Manufacturer | - | - | VISHAY |
Product Category | - | - | FETs - Single |
Series | - | - | SISxxxDN |
Packaging | - | - | Reel |
Part Aliases | - | - | SIS430DN-GE3 |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | PowerPAK-1212-8 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single Quad Drain Triple Source |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 3.8 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 10 ns |
Rise Time | - | - | 12 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 35 A |
Vds Drain Source Breakdown Voltage | - | - | 25 V |
Rds On Drain Source Resistance | - | - | 5.6 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 25 ns |
Typical Turn On Delay Time | - | - | 20 ns |
Forward Transconductance Min | - | - | 61 S |
Channel Mode | - | - | Enhancement |