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SPB80N06S2-08

SPB80N06S2-08
Mfr. #:
SPB80N06S2-08
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 80A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB80N06S2-08 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SPB80N06S2-0, SPB80N06S2, SPB80N06S, SPB80N06, SPB80N0, SPB80N, SPB8, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel
***ponent Stockers USA
80 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***S
French Electronic Distributor since 1988
***inecomponents.com
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB T&R
***ponent Stockers USA
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***et
TRANS MOSFET N-CH 55V 75A 3PIN TO-263AB
*** Services
CoC and 2-years warranty / RFQ for pricing
***ineon SCT
55V, N-Ch, 6.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
***ure Electronics
Single N-Channel 55 V 6.7 mOhm 130 nC OptiMOS™ Power Mosfet - TO-263-3
***ow.cn
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 210W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ical
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Mosfet, Aec-Q101, N-Ch, 55V, 75A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 55V 94A Automotive 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
AUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, D2PAK
***el Electronic
the nexfet power mosfet has been designed to minimize losses in power conversion applications.
***ernational Rectifier
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ark
Mosfet, N Channel, 55V, 94A, D2Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 55V, 94A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:94A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
***i-Key
MOSFET N-CH 55V 75A D2PAK
***et
TRANS MOSFET N-CH 55V 75A 3PIN TO-263AB
***ser
MOSFETs 75a,55V,0.007Ohm,NCh UltraFET
***inecomponents.com
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***i-Key
MOSFET N-CH 55V 75A D2PAK
***ser
MOSFETs 75a,55V,0.008Ohm,NCh UltraFET
***Yang
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB - Bulk
Teil # Mfg. Beschreibung Aktie Preis
SPB80N06S2-08
DISTI # SPB80N06S2-08-ND		Infineon Technologies AGMOSFET N-CH 55V 80A D2PAK
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    SPB80N06S2-08
    DISTI # SPB80N06S2-08    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SPB80N06S2-08)
    RoHS: Not Compliant
    Min Qty: 417
    Container: Bulk    		Americas - 0
    • 4170:$0.7619
    • 2085:$0.7759
    • 1251:$0.8029
    • 834:$0.8329
    • 417:$0.8639
    SPB80N06S2-08Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant    		3900
    • 1000:$0.7900
    • 500:$0.8300
    • 100:$0.8700
    • 25:$0.9000
    • 1:$0.9700
    Bild Teil # Beschreibung
    SPB80N06S-08

    Mfr.#: SPB80N06S-08

    OMO.#: OMO-SPB80N06S-08

    		 MOSFET N-Ch 55V 80A D2PAK-2 SIPMOS
    SPB80N03E3045A

    Mfr.#: SPB80N03E3045A

    OMO.#: OMO-SPB80N03E3045A-1190

    		 Neu und Original
    SPB80N03S2L-03 G

    Mfr.#: SPB80N03S2L-03 G

    OMO.#: OMO-SPB80N03S2L-03-G-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 80A D2PAK
    SPB80N03S2L-05

    Mfr.#: SPB80N03S2L-05

    OMO.#: OMO-SPB80N03S2L-05-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 80A D2PAK
    SPB80N03S2L-05 G

    Mfr.#: SPB80N03S2L-05 G

    OMO.#: OMO-SPB80N03S2L-05-G-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 80A D2PAK
    SPB80N06

    Mfr.#: SPB80N06

    OMO.#: OMO-SPB80N06-1190

    		 Neu und Original
    SPB80N06S2-05

    Mfr.#: SPB80N06S2-05

    OMO.#: OMO-SPB80N06S2-05-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 80A D2PAK
    SPB80N06S2L-05+

    Mfr.#: SPB80N06S2L-05+

    OMO.#: OMO-SPB80N06S2L-05--1190

    		 MOSFET N-CH 55V 80A D2PAK
    SPB80N06S2L-09

    Mfr.#: SPB80N06S2L-09

    OMO.#: OMO-SPB80N06S2L-09-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 80A D2PAK
    SPB80N06S2L-11

    Mfr.#: SPB80N06S2L-11

    OMO.#: OMO-SPB80N06S2L-11-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 80A D2PAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SPB80N06S2-08 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,14 $
    1,14 $
    10
    1,09 $
    10,86 $
    100
    1,03 $
    102,86 $
    500
    0,97 $
    485,70 $
    1000
    0,91 $
    914,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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