APT150GN60LDQ4G

APT150GN60LDQ4G
Mfr. #:
APT150GN60LDQ4G
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Modules FG, IGBT, 600V, 100A,TO-264, RoHS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT150GN60LDQ4G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT150GN60LDQ4G DatasheetAPT150GN60LDQ4G Datasheet (P4-P6)APT150GN60LDQ4G Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Siliziumkarbid-Module
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.45 V
Kontinuierlicher Kollektorstrom bei 25 C:
220 A
Gate-Emitter-Leckstrom:
600 nA
Pd - Verlustleistung:
536 W
Paket / Koffer:
TO-264-3
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Montageart:
Durchgangsloch
Maximale Gate-Emitter-Spannung:
30 V
Produktart:
IGBT-Module
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Gewichtseinheit:
0.352740 oz
Tags
APT150GN60L, APT150GN6, APT150GN, APT150, APT15, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-264
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***i-Key
IGBT 600V 220A 536W TO-264L
***hardson RFPD
POWER IGBT TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
APT150GN60LDQ4G
DISTI # V36:1790_09096172
Microsemi CorporationTrans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-264
RoHS: Compliant
0
  • 25000:$17.4100
  • 12500:$17.4200
  • 2500:$18.9800
  • 250:$22.5900
  • 25:$23.2500
APT150GN60LDQ4G
DISTI # APT150GN60LDQ4G-ND
Microsemi CorporationIGBT 600V 220A 536W TO-264L
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$23.2504
APT150GN60LDQ4G
DISTI # APT150GN60LDQ4G
Microchip Technology IncTransistor IGBT N-Channel 600V 220A 3-Pin TO-264 - Rail/Tube (Alt: APT150GN60LDQ4G)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$16.1900
  • 1200:$16.3900
  • 720:$16.8900
  • 480:$17.4900
  • 240:$18.0900
APT150GN60LDQ4G
DISTI # 494-APT150GN60LDQ4G
Microchip Technology IncIGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
RoHS: Compliant
2
  • 1:$25.5300
  • 5:$24.3800
  • 10:$23.6200
  • 25:$21.7100
  • 50:$21.0600
  • 100:$20.0600
  • 250:$18.4300
APT150GN60LDQ4G
DISTI # APT150GN60LDQ4G
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
    Bild Teil # Beschreibung
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    CD4027BEE4

    Mfr.#: CD4027BEE4

    OMO.#: OMO-CD4027BEE4--1

    Neu und Original
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    OMO.#: OMO-CD74HC08E-TEXAS-INSTRUMENTS

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von APT150GN60LDQ4G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    25,53 $
    25,53 $
    5
    24,38 $
    121,90 $
    10
    23,62 $
    236,20 $
    25
    21,71 $
    542,75 $
    50
    21,06 $
    1 053,00 $
    100
    20,06 $
    2 006,00 $
    250
    18,43 $
    4 607,50 $
    500
    16,97 $
    8 485,00 $
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