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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HP8MA2TB1 DISTI # HP8MA2TB1 | ROHM Semiconductor | (Alt: HP8MA2TB1) RoHS: Compliant Min Qty: 2500 | Asia - 0 | |
| HP8MA2TB1 DISTI # 10AC7464 | ROHM Semiconductor | MOSFET, N& P-CH, 30V, HSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes | 1673 |
|
| HP8MA2TB1 | ROHM Semiconductor | POWER FIELD-EFFECT TRANSISTOR | 1314 |
|
| HP8MA2TB1 | ROHM Semiconductor | 2401 | ||
| HP8MA2TB1 DISTI # 2706747 | ROHM Semiconductor | MOSFET, N& P-CH, 30V, HSOP RoHS: Compliant | 1633 |
|
| HP8MA2TB1 DISTI # 2706747 | ROHM Semiconductor | MOSFET, N& P-CH, 30V, HSOP RoHS: Compliant | 1623 |
|
| HP8MA2TB1 | ROHM Semiconductor | RoHS(ship within 1day) | 1727 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: HP8MA2TB1 OMO.#: OMO-HP8MA2TB1 |
MOSFET 30V NCH+PCH MIDDLE POWER |
|
Mfr.#: HP8MA2-TB1 OMO.#: OMO-HP8MA2-TB1-1190 |
Neu und Original |
|
|
Mfr.#: HP8MA2TB1 OMO.#: OMO-HP8MA2TB1-1190 |
MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V, |