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HP8MA2TB1

HP8MA2TB1
Mfr. #:
HP8MA2TB1
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 30V NCH+PCH MIDDLE POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HP8MA2TB1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
HP8MA2TB1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSOP-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
18 A, 15 A
Rds On - Drain-Source-Widerstand:
9.6 mOhms, 17.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC, 25 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
ROHM Halbleiter
Abfallzeit:
14 ns, 60 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns, 14 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns, 73 ns
Typische Einschaltverzögerungszeit:
14 ns, 9.4 ns
Teil # Aliase:
HP8MA2
Tags
HP8M, HP8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array N-CH/P-CH 30V ±18A/±15A 8-Pin HSOP Emboss T/R
***nell
MOSFET, N& P-CH, 30V, HSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***i-Key
HP8MA2 IS LOW ON-RESISTANCE AND
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
HP8MA2TB1
DISTI # 10AC7464		ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes2383
  • 1:$1.1100
  • 10:$0.9040
  • 25:$0.7990
  • 50:$0.7120
  • 100:$0.6100
  • 250:$0.5360
  • 500:$0.4230
  • 1000:$0.4070
HP8MA2TB1ROHM Semiconductor 2401
    HP8MA2TB1
    DISTI # 2706747    		ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant    		2378
    • 1:$1.2900
    • 10:$1.1200
    • 100:$0.9140
    • 250:$0.7720
    • 500:$0.6680
    • 1000:$0.6320
    HP8MA2TB1ROHM SemiconductorRoHS(ship within 1day)1887
    • 1:$1.6600
    • 10:$1.2500
    • 50:$1.0400
    • 100:$0.8300
    • 500:$0.7100
    • 1000:$0.6700
    HP8MA2TB1
    DISTI # 2706747    		ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant    		2388
    • 5:£0.8110
    • 25:£0.7440
    • 100:£0.5200
    Bild Teil # Beschreibung
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1

    		 MOSFET 30V NCH+PCH MIDDLE POWER
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1

    		 MOSFET 100V NCH+PCH POWER
    HP8M31TB1

    Mfr.#: HP8M31TB1

    OMO.#: OMO-HP8M31TB1

    		 MOSFET 60V NCH+PCH POWER
    HP8M31 , 2SB1545

    Mfr.#: HP8M31 , 2SB1545

    OMO.#: OMO-HP8M31-2SB1545-1190

    		 Neu und Original
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1-1190

    		 HP8M51TB1 IS LOW ON-RESISTANCE A
    HP8MA2-TB1

    Mfr.#: HP8MA2-TB1

    OMO.#: OMO-HP8MA2-TB1-1190

    		 Neu und Original
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1-1190

    		 MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V,
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von HP8MA2TB1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,52 $
    1,52 $
    10
    1,30 $
    13,00 $
    100
    1,04 $
    104,00 $
    500
    0,91 $
    455,00 $
    1000
    0,75 $
    753,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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