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BSC110N06NS3GATMA1

BSC110N06NS3GATMA1
Mfr. #:
BSC110N06NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC110N06NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
11 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
25 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
77 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
BSC110N06NS3 BSC11N6NS3GXT G SP000453668
Gewichtseinheit:
0.007055 oz
Tags
BSC110N06N, BSC110N0, BSC110, BSC11, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 11 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8
*** Source Electronics
Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 56A,D-Pak,PD 110W,VGS+/-20V
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:79A; On Resistance Rds(On):0.0071Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:56A; On Resistance Rds(On):0.0066Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 99W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a DPAK (TO-252) package, DPAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
***nell
MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 60V 14.2A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
***i-Key
MOSFET N-CH 60V 14.2A/59A TO252
***et
Trans MOSFET N-CH 60V 57A 3-Pin TO-252 T/R
***ical
Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGS
***i-Key
MOSFET N-CH 60V 13.3A/57A TO252
***roFlash
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGS
***ark
MOSFET, N-CH, 60V, 59A, TO-252 ROHS COMPLIANT: YES
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
Teil # Mfg. Beschreibung Aktie Preis
BSC110N06NS3GATMA1
DISTI # V72:2272_06384841		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R
RoHS: Compliant		149
  • 100:$0.5578
  • 25:$0.6516
  • 10:$0.7964
  • 1:$0.9224
BSC110N06NS3GATMA1
DISTI # V36:1790_06384841		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R
RoHS: Compliant		0
  • 5000:$0.3903
BSC110N06NS3GATMA1
DISTI # BSC110N06NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2930In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
BSC110N06NS3GATMA1
DISTI # BSC110N06NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2930In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
BSC110N06NS3GATMA1
DISTI # BSC110N06NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 25000:$0.3325
  • 10000:$0.3360
  • 5000:$0.3491
BSC110N06NS3GATMA1
DISTI # 31653122		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R
RoHS: Compliant		149
  • 23:$0.9224
BSC110N06NS3GATMA1
DISTI # BSC110N06NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC110N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.2539
  • 30000:$0.2579
  • 20000:$0.2669
  • 10000:$0.2769
  • 5000:$0.2879
BSC110N06NS3GATMA1
DISTI # SP000453668		Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: SP000453668)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.2399
  • 30000:€0.2589
  • 20000:€0.2799
  • 10000:€0.3059
  • 5000:€0.3739
BSC110N06NS3GATMA1
DISTI # 47W3312		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes2100
  • 1000:$0.3960
  • 500:$0.5020
  • 100:$0.5680
  • 10:$0.7390
  • 1:$0.8590
BSC110N06NS3GATMA1.
DISTI # 27AC1077		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.2650
  • 30000:$0.2700
  • 20000:$0.2790
  • 10000:$0.2900
  • 1:$0.3010
BSC110N06NS3 G
DISTI # 726-BSC110N06NS3G		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		47757
  • 1:$0.8200
  • 10:$0.6990
  • 100:$0.5370
  • 500:$0.4750
  • 1000:$0.3740
  • 5000:$0.3580
BSC110N06NS3GATMA1
DISTI # 726-BSC110N06NS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		11243
  • 1:$0.8200
  • 10:$0.6990
  • 100:$0.5370
  • 500:$0.4750
  • 1000:$0.3740
  • 5000:$0.3580
BSC110N06NS3GATMA1
DISTI # 8275303P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL7600
  • 250:£0.4030
BSC110N06NS3GATMA1
DISTI # 2212842		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON6938
  • 500:£0.3870
  • 250:£0.4130
  • 100:£0.4380
  • 10:£0.6220
  • 1:£0.7560
BSC110N06NS3GATMA1
DISTI # 2212842		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		5783
  • 5000:$0.5800
  • 1000:$0.5910
  • 500:$0.7490
  • 100:$0.8470
  • 10:$1.1000
  • 1:$1.2800
Bild Teil # Beschreibung
SMCJ5.0CA-E3/57T

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 Power Switch ICs - Power Distribution Smart Low Side 1 Ch 60 V 1.8 W
FTSH-105-01-F-DV-K-P-TR

Mfr.#: FTSH-105-01-F-DV-K-P-TR

OMO.#: OMO-FTSH-105-01-F-DV-K-P-TR

 Headers & Wire Housings .050" Micro Terminal Strip
SMCJ5.0CA-E3/57T

Mfr.#: SMCJ5.0CA-E3/57T

OMO.#: OMO-SMCJ5-0CA-E3-57T-VISHAY

 TVS Diodes - Transient Voltage Suppressors 1500W 5.0V Bidirect
FTSH-105-01-F-DV-K-P-TR

Mfr.#: FTSH-105-01-F-DV-K-P-TR

OMO.#: OMO-FTSH-105-01-F-DV-K-P-TR-SAMTEC

 Conn Unshrouded Header HDR 10 POS 1.27mm Solder ST SMD T/R
BSS138NH6327XTSA2

Mfr.#: BSS138NH6327XTSA2

OMO.#: OMO-BSS138NH6327XTSA2-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 230MA SOT-23
ADXL343BCCZ-RL7

Mfr.#: ADXL343BCCZ-RL7

OMO.#: OMO-ADXL343BCCZ-RL7-ANALOG-DEVICES

 Motion & Position Sensors Accelerometers 3-Axis Low g Digital-Output
BC846BLT1G

Mfr.#: BC846BLT1G

OMO.#: OMO-BC846BLT1G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 100mA 80V NPN
Verfügbarkeit
Aktie:
11
Auf Bestellung:
1994
Menge eingeben:
Der aktuelle Preis von BSC110N06NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,82 $
0,82 $
10
0,70 $
6,99 $
100
0,54 $
53,70 $
500
0,48 $
237,50 $
1000
0,37 $
374,00 $
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