BSC11

BSC110N06NS3 G vs BSC110N06NS3GATMA1 vs BSC110N15NS5ATMA1

 
PartNumberBSC110N06NS3 GBSC110N06NS3GATMA1BSC110N15NS5ATMA1
DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8PG-TDSON-8PG-TDSON-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V150 V
Id Continuous Drain Current50 A50 A76 A
Rds On Drain Source Resistance9 mOhms11 mOhms11 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V3 V
Vgs Gate Source Voltage20 V10 V10 V
Qg Gate Charge33 nC25 nC28 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation50 W50 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3OptiMOS 5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min25 S25 S29 S
Fall Time6 ns6 ns2.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time77 ns77 ns3.3 ns
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns14 ns14.5 ns
Typical Turn On Delay Time10 ns10 ns10.3 ns
Part # AliasesBSC110N06NS3GATMA1 BSC11N6NS3GXT SP000453668BSC110N06NS3 BSC11N6NS3GXT G SP000453668BSC110N15NS5 SP001181418
Unit Weight0.003527 oz0.007055 oz0.007041 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC110N06NS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC117N08NS5ATMA1 MOSFET N-Ch 80V 49A TDSON-8
BSC118N10NS G MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
BSC110N06NS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N15NS5ATMA1 MOSFET MV POWER MOS
BSC112N06LDATMA1 MOSFET TRENCH 40<-<100V
BSC110N15NS5ATMA1 MOSFET N-CH 150V 76A 8TDSON
BSC119N03S G MOSFET N-CH 30V 30A TDSON-8
BSC110N06NS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC118N10NSGATMA1 MOSFET N-CH 100V 71A TDSON-8
BSC117N08NS5ATMA1 RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8
Infineon Technologies
Infineon Technologies
BSC118N10NSGATMA1 MOSFET MV POWER MOS
BSC110N06NS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N06NS3G Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: BSC110N06NS3 G)
BSC110N06NS3GATMA1 , TDZ Neu und Original
BSC110N06S3G Neu und Original
BSC110N15NS5 Neu und Original
BSC110N15NS53 Neu und Original
BSC118N10NS Neu und Original
BSC118N10NS3G Neu und Original
BSC118N10NSGATMA1 , TDZ1 Neu und Original
BSC119N03LSG Neu und Original
BSC119N03MSC Neu und Original
BSC119N03MSC G MOSFET N-KANAL POWER MOS
BSC119N03MSCG Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC119N03S Neu und Original
BSC119N03S G Neu und Original
BSC119N03SG Neu und Original
BSC119N03SG 119N03S Neu und Original
BSC119N3S Neu und Original
BSC119N3SG Neu und Original
BSC117N08NS5 Neu und Original
BSC118N10NSG Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC118N10NS G Darlington Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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