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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC118N10NSGATMA1 DISTI # V72:2272_06383308 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3698 |
|
| BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4603In Stock |
|
| BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4603In Stock |
|
| BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC118N10NSGATMA1 DISTI # 26195152 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3698 |
|
| BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC118N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC118N10NSGATMA1. DISTI # 31AC8221 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):11.8mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:114W,No. of Pins:8Pins | 0 |
|
| BSC118N10NS G DISTI # 726-BSC118N10NSG | Infineon Technologies AG | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 RoHS: Compliant | 0 |
|
| BSC118N10NSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC118N10NSGATMA1 DISTI # C1S322000210907 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3698 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC118N10NSGATMA1 OMO.#: OMO-BSC118N10NSGATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSC118N10NSGATMA1 , TDZ1 |
Neu und Original |
|
|
Mfr.#: BSC118N10NSG OMO.#: OMO-BSC118N10NSG-1190 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC118N10NSGATMA1 |
MOSFET N-CH 100V 71A TDSON-8 |