 |  | | |
| PartNumber | BSC118N10NSGATMA1 | BSC118N10NSGATMA1 , TDZ1 | BSC118N10NSG |
| Description | MOSFET MV POWER MOS | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | - | |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSC118N10NS BSC118N1NSGXT G SP000379599 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC118N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC118N10NSGATMA1 , TDZ1 | Neu und Original | ||
| BSC118N10NSG | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSC118N10NSGATMA1 | MOSFET N-CH 100V 71A TDSON-8 |