HGT1S20N60C3R

HGT1S20N60C3R
Mfr. #:
HGT1S20N60C3R
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S20N60C3R Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S20N60C, HGT1S20N6, HGT1S20, HGT1S2, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
40 A 600 V N-CHANNEL IGBT TO-262AA
Teil # Mfg. Beschreibung Aktie Preis
HGT1S20N60C3RHarris SemiconductorInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA
RoHS: Not Compliant
580
  • 1000:$1.7800
  • 500:$1.8700
  • 100:$1.9500
  • 25:$2.0300
  • 1:$2.1900
Bild Teil # Beschreibung
HGT1S20N60C3S9A

Mfr.#: HGT1S20N60C3S9A

OMO.#: OMO-HGT1S20N60C3S9A

IGBT Transistors 45a 600V N-Ch IGBT UFS Series
HGT1S20N36G30LS

Mfr.#: HGT1S20N36G30LS

OMO.#: OMO-HGT1S20N36G30LS-1190

Neu und Original
HGT1S20N36G3VLS

Mfr.#: HGT1S20N36G3VLS

OMO.#: OMO-HGT1S20N36G3VLS-1190

Motor / Motion / Ignition Controllers & Drivers 20A 360V Clamp - Bulk (Alt: HGT1S20N36G3VLS)
HGT1S20N36G3VLSR4737 (S1

Mfr.#: HGT1S20N36G3VLSR4737 (S1

OMO.#: OMO-HGT1S20N36G3VLSR4737-S1-1190

Neu und Original
HGT1S20N60B3

Mfr.#: HGT1S20N60B3

OMO.#: OMO-HGT1S20N60B3-1190

Neu und Original
HGT1S20N60B3S

Mfr.#: HGT1S20N60B3S

OMO.#: OMO-HGT1S20N60B3S-1190

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S20N60C3R

Mfr.#: HGT1S20N60C3R

OMO.#: OMO-HGT1S20N60C3R-1190

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S20N60C3RS

Mfr.#: HGT1S20N60C3RS

OMO.#: OMO-HGT1S20N60C3RS-1190

Neu und Original
HGT1S2N120CNDS

Mfr.#: HGT1S2N120CNDS

OMO.#: OMO-HGT1S2N120CNDS-1190

Neu und Original
HGT1S20N35F3VLR4505

Mfr.#: HGT1S20N35F3VLR4505

OMO.#: OMO-HGT1S20N35F3VLR4505-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von HGT1S20N60C3R dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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ext. Preis
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500
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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