HGT1S20N60B3S

HGT1S20N60B3S
Mfr. #:
HGT1S20N60B3S
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S20N60B3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S20N6, HGT1S20, HGT1S2, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
40A, 600V, UFS N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGT1S20N60B3SHarris SemiconductorInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
635
  • 1000:$2.7500
  • 500:$2.9000
  • 100:$3.0100
  • 25:$3.1400
  • 1:$3.3900
Bild Teil # Beschreibung
HGT1S20N36G3VL

Mfr.#: HGT1S20N36G3VL

OMO.#: OMO-HGT1S20N36G3VL

Motor / Motion / Ignition Controllers & Drivers 20A 360V Clamp
HGT1S20N60C3S9A

Mfr.#: HGT1S20N60C3S9A

OMO.#: OMO-HGT1S20N60C3S9A-ON-SEMICONDUCTOR

IGBT Transistors 45a 600V N-Ch IGBT UFS Series
HGT1S20N35G3VL

Mfr.#: HGT1S20N35G3VL

OMO.#: OMO-HGT1S20N35G3VL-1190

Neu und Original
HGT1S20N35G3VLS

Mfr.#: HGT1S20N35G3VLS

OMO.#: OMO-HGT1S20N35G3VLS-ON-SEMICONDUCTOR

IGBT 380V 20A 150W TO263AB
HGT1S20N36G3VL

Mfr.#: HGT1S20N36G3VL

OMO.#: OMO-HGT1S20N36G3VL-ON-SEMICONDUCTOR

IGBT 395V 37.7A 150W TO262AA
HGT1S20N60C3R

Mfr.#: HGT1S20N60C3R

OMO.#: OMO-HGT1S20N60C3R-1190

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S20N60C3S G20N60C3

Mfr.#: HGT1S20N60C3S G20N60C3

OMO.#: OMO-HGT1S20N60C3S-G20N60C3-1190

Neu und Original
HGT1S2N120CN

Mfr.#: HGT1S2N120CN

OMO.#: OMO-HGT1S2N120CN-ON-SEMICONDUCTOR

IGBT 1200V 13A 104W I2PAK
HGT1S2N120CNDS

Mfr.#: HGT1S2N120CNDS

OMO.#: OMO-HGT1S2N120CNDS-1190

Neu und Original
HGT1S2N120CNS

Mfr.#: HGT1S2N120CNS

OMO.#: OMO-HGT1S2N120CNS-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von HGT1S20N60B3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,00 $
0,00 $
10
0,00 $
0,00 $
100
0,00 $
0,00 $
500
0,00 $
0,00 $
1000
0,00 $
0,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top