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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S2N120CN DISTI # HGT1S2N120CN-ND | ON Semiconductor | IGBT 1200V 13A 104W I2PAK Min Qty: 400 Container: Tube | Limited Supply - Call | |
| HGT1S2N120CN DISTI # HGT1S2N120CN | ON Semiconductor | PWR IGBT 2.6A 1200V NPT N-CHANNE TO-262AA - Bulk (Alt: HGT1S2N120CN) RoHS: Compliant Min Qty: 179 Container: Bulk | Americas - 0 |
|
| HGT1S2N120CN | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-262AA RoHS: Compliant | 87688 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S20N35G3VLS OMO.#: OMO-HGT1S20N35G3VLS |
Motor / Motion / Ignition Controllers & Drivers Coil Dr 20A 350V |
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Mfr.#: HGT1S20N35G3VLS9A OMO.#: OMO-HGT1S20N35G3VLS9A-1190 |
Neu und Original |
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Mfr.#: HGT1S20N36G3VL |
IGBT 395V 37.7A 150W TO262AA |
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Mfr.#: HGT1S20N36G3VLSR4737 |
Neu und Original |
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Mfr.#: HGT1S20N36G3VLSR4737 (S1 |
Neu und Original |
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Mfr.#: HGT1S20N60A4S9A |
IGBT 600V 70A 290W TO263AB |
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Mfr.#: HGT1S20N60B3 OMO.#: OMO-HGT1S20N60B3-1190 |
Neu und Original |
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Mfr.#: HGT1S20N60C3R OMO.#: OMO-HGT1S20N60C3R-1190 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
|
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Mfr.#: HGT1S2N120CN |
IGBT 1200V 13A 104W I2PAK |
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Mfr.#: HGT1S2N120CNDS OMO.#: OMO-HGT1S2N120CNDS-1190 |
Neu und Original |