HGT1S20N60C3S9A

HGT1S20N60C3S9A
Mfr. #:
HGT1S20N60C3S9A
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 45a 600V N-Ch IGBT UFS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S20N60C3S9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IC-Chips
Serie
-
Verpackung
Band & Spule (TR)
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-263AB
Aufbau
Single
Leistung max
164W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
45A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
300A
Vce-on-Max-Vge-Ic
1.8V @ 15V, 20A
Schaltenergie
295μJ (on), 500μJ (off)
Gate-Gebühr
91nC
Td-ein-aus-25°C
28ns/151ns
Testbedingung
480V, 20A, 10 Ohm, 15V
Pd-Verlustleistung
164 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.4 V
Kontinuierlicher Kollektorstrom-bei-25-C
45 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
45 A
Tags
HGT1S20N60C3S, HGT1S20N60C, HGT1S20N6, HGT1S20, HGT1S2, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 45A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
HGT1S20N60C3S9A 45A 600V Surface Mount N-Channel IGBT -TO-263AB
***ark
TAPE REEL/PWR IGBT UFS 45A 600V N-CH TO-263AB TAPE AND REEL
***Semiconductor
45A, 600V, UFS Series N-Channel IGBT
***et
PWR IGBT UFS 45A 600V N-CH TO-263AB TAPE AND REEL
***ser
IGBTs 45a, 600V N-Ch IGBT UFS Series
***i-Key
IGBT UFS N-CHAN 600V TO-263AB
Teil # Mfg. Beschreibung Aktie Preis
HGT1S20N60C3S9A
DISTI # HGT1S20N60C3S9AOSTR-ND
ON SemiconductorIGBT 600V 45A 164W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 2400:$2.0740
  • 1600:$2.1777
  • 800:$2.5821
HGT1S20N60C3S9A
DISTI # HGT1S20N60C3S9AOSCT-ND
ON SemiconductorIGBT 600V 45A 164W TO263AB
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
800In Stock
  • 100:$3.1242
  • 10:$3.8130
  • 1:$4.2500
HGT1S20N60C3S9A
DISTI # HGT1S20N60C3S9AOSDKR-ND
ON SemiconductorIGBT 600V 45A 164W TO263AB
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
800In Stock
  • 100:$3.1242
  • 10:$3.8130
  • 1:$4.2500
HGT1S20N60C3S9A
DISTI # HGT1S20N60C3S9A
ON SemiconductorTrans IGBT Chip N-CH 600V 45A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S20N60C3S9A)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.8900
  • 1600:€1.7900
  • 3200:€1.6900
  • 4800:€1.5900
  • 8000:€1.4900
HGT1S20N60C3S9A
DISTI # HGT1S20N60C3S9A
ON SemiconductorTrans IGBT Chip N-CH 600V 45A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S20N60C3S9A)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
  • 8000:$1.4900
HGT1S20N60C3S9A
DISTI # 82C5195
ON SemiconductorTRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,20A I(C),TO-263AB , ROHS COMPLIANT: YES0
  • 1:$2.1200
  • 800:$2.1100
  • 2400:$1.9200
  • 9600:$1.8600
HGT1S20N60C3S9A
DISTI # 512-HGT1S20N60C3S9A
ON SemiconductorIGBT Transistors 45a 600V N-Ch IGBT UFS Series
RoHS: Compliant
0
    Bild Teil # Beschreibung
    HGT1S20N35G3VLS

    Mfr.#: HGT1S20N35G3VLS

    OMO.#: OMO-HGT1S20N35G3VLS

    Motor / Motion / Ignition Controllers & Drivers Coil Dr 20A 350V
    HGT1S20N35G3VLS

    Mfr.#: HGT1S20N35G3VLS

    OMO.#: OMO-HGT1S20N35G3VLS-ON-SEMICONDUCTOR

    IGBT 380V 20A 150W TO263AB
    HGT1S20N36G30LS

    Mfr.#: HGT1S20N36G30LS

    OMO.#: OMO-HGT1S20N36G30LS-1190

    Neu und Original
    HGT1S20N36G3VL

    Mfr.#: HGT1S20N36G3VL

    OMO.#: OMO-HGT1S20N36G3VL-ON-SEMICONDUCTOR

    IGBT 395V 37.7A 150W TO262AA
    HGT1S20N36G3VLSR4737 (S1

    Mfr.#: HGT1S20N36G3VLSR4737 (S1

    OMO.#: OMO-HGT1S20N36G3VLSR4737-S1-1190

    Neu und Original
    HGT1S20N60A4S9A

    Mfr.#: HGT1S20N60A4S9A

    OMO.#: OMO-HGT1S20N60A4S9A-ON-SEMICONDUCTOR

    IGBT 600V 70A 290W TO263AB
    HGT1S20N60A4S9A(20N60A4)

    Mfr.#: HGT1S20N60A4S9A(20N60A4)

    OMO.#: OMO-HGT1S20N60A4S9A-20N60A4--1190

    Neu und Original
    HGT1S20N60B3

    Mfr.#: HGT1S20N60B3

    OMO.#: OMO-HGT1S20N60B3-1190

    Neu und Original
    HGT1S20N60B3S

    Mfr.#: HGT1S20N60B3S

    OMO.#: OMO-HGT1S20N60B3S-1190

    Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S20N60C3R

    Mfr.#: HGT1S20N60C3R

    OMO.#: OMO-HGT1S20N60C3R-1190

    Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von HGT1S20N60C3S9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,99 $
    1,99 $
    10
    1,89 $
    18,92 $
    100
    1,79 $
    179,28 $
    500
    1,69 $
    846,60 $
    1000
    1,59 $
    1 593,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Top