APT43GA90BD30

APT43GA90BD30
Mfr. #:
APT43GA90BD30
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT43GA90BD30 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Microsemi Corporation
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247 [B]
Aufbau
Single
Leistung max
337W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
78A
Spannungs-Kollektor-Emitter-Breakdown-Max
900V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
129A
Vce-on-Max-Vge-Ic
3.1V @ 15V, 47A
Schaltenergie
875μJ (on), 425μJ (off)
Gate-Gebühr
116nC
Td-ein-aus-25°C
12ns/82ns
Testbedingung
600V, 25A, 4.7 Ohm, 15V
Pd-Verlustleistung
337 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
900 V
Kollektor-Emitter-Sättigungsspannung
2.5 V
Kontinuierlicher Kollektorstrom-bei-25-C
78 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
78 A
Tags
APT43, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
APT43GA90BD30
DISTI # APT43GA90BD30-ND
Microsemi CorporationIGBT 900V 78A 337W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
48In Stock
  • 510:$6.2418
  • 270:$6.8458
  • 120:$7.4499
  • 30:$8.2553
  • 10:$9.0610
  • 1:$10.0700
APT43GA90BD30
DISTI # 494-APT43GA90BD30
Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant
72
  • 1:$9.4000
  • 10:$8.4600
  • 25:$7.7000
  • 50:$7.1800
  • 100:$6.9500
  • 250:$6.3400
  • 500:$5.7900
  • 1000:$4.9000
APT43GA90BD30
DISTI # APT43GA90BD30
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
  • 67:$5.0300
  • 100:$4.9000
  • 500:$4.8400
Bild Teil # Beschreibung
APT43GA90BD30

Mfr.#: APT43GA90BD30

OMO.#: OMO-APT43GA90BD30

IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
APT43GA90B

Mfr.#: APT43GA90B

OMO.#: OMO-APT43GA90B

IGBT Transistors FG, IGBT, 900V, TO-247
APT43GA90BD30

Mfr.#: APT43GA90BD30

OMO.#: OMO-APT43GA90BD30-MICROSEMI

IGBT Transistors
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von APT43GA90BD30 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,14 $
7,14 $
10
6,78 $
67,83 $
100
6,43 $
642,60 $
500
6,07 $
3 034,50 $
1000
5,71 $
5 712,00 $
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