SIA445EDJ-T1-GE3

SIA445EDJ-T1-GE3
Mfr. #:
SIA445EDJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA445EDJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA445EDJ-T1-GE3 DatasheetSIA445EDJ-T1-GE3 Datasheet (P4-P6)SIA445EDJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIA445EDJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
16.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
48 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
19 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIA
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
29 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SIA445EDJ-GE3
Tags
SIA445, SIA44, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P-CH, -20V, POWERPAK SC70-6; Transistor Polarity:P Channel; Continuous D
***ure Electronics
Single P-Channel 20 V 0.0165 O 23 nC Power Mosfet - PowerPAK-SC-70-6L
***enic
20V 12A 19W 16.5m´Î@4.5V7A 1.2V@250Ã×A P Channel PowerPAK SC-70-6 MOSFETs ROHS
***ical
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R
***S
French Electronic Distributor since 1988
***nell
MOSFET P-CH, 20V, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
SiA445EDJ P-Channel TrenchFET® Power MOSFET
Vishay Siliconix's SiA445EDJ and SiA453EDJ are P-Channel TrenchFET® Power MOSFET featuring Thermally Enhanced PowerPAK®. Designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm, SiA445EDJ is 50% smaller than TSOP-6 devices. The slim 0.6mm profile makes SiA445EDJ 40% smaller than TSOP-6 devices. SiA445EDJ and SiA453EDJ offer low on-resistance compared to N-channel down to 11 mΩ and P-channel down to 16mΩ. In addition, SiA445EDJ provides 75% higher maximum power dissipation than devices with on-resistance ratings down to 1.2V. A zener diode in the SiA445EDJ device provides built-in ESD protection with 2000V typical EDS performance. Available in the SC-70 package and 100% Rg tested, SiA445EDJ and SiA453EDJ are well-suited for load, battery, and charger switching in handheld devices including smart phones, tablet PC, and mobile computing.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SIA445EDJ-T1-GE3
DISTI # V36:1790_09216841
Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
  • 3000000:$0.2209
  • 1500000:$0.2210
  • 300000:$0.2263
  • 30000:$0.2337
  • 3000:$0.2349
SIA445EDJ-T1-GE3
DISTI # V72:2272_09216841
Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
    SIA445EDJ-T1-GE3
    DISTI # SIA445EDJ-T1-GE3CT-ND
    Vishay SiliconixMOSFET P-CH 20V 12A SC-70
    Min Qty: 1
    Container: Cut Tape (CT)
    24In Stock
    • 1000:$0.2670
    • 500:$0.3337
    • 100:$0.4222
    • 10:$0.5510
    • 1:$0.6300
    SIA445EDJ-T1-GE3
    DISTI # SIA445EDJ-T1-GE3DKR-ND
    Vishay SiliconixMOSFET P-CH 20V 12A SC-70
    Min Qty: 1
    Container: Digi-Reel®
    24In Stock
    • 1000:$0.2670
    • 500:$0.3337
    • 100:$0.4222
    • 10:$0.5510
    • 1:$0.6300
    SIA445EDJ-T1-GE3
    DISTI # SIA445EDJ-T1-GE3TR-ND
    Vishay SiliconixMOSFET P-CH 20V 12A SC-70
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 15000:$0.2155
    • 6000:$0.2187
    • 3000:$0.2349
    SIA445EDJ-T1-GE3
    DISTI # SIA445EDJ-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.8A 6-Pin PowerPAK SC-70 T/R (Alt: SIA445EDJ-T1-GE3)
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.2494
    • 18000:€0.2820
    • 12000:€0.3073
    • 6000:€0.3362
    • 3000:€0.3615
    SIA445EDJ-T1-GE3
    DISTI # SIA445EDJ-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.8A 6-Pin PowerPAK SC-70 T/R (Alt: SIA445EDJ-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SIA445EDJ-T1-GE3
      DISTI # SIA445EDJ-T1-GE3
      Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA445EDJ-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.2203
      • 18000:$0.2261
      • 12000:$0.2322
      • 6000:$0.2386
      • 3000:$0.2455
      SIA445EDJ-T1-GE3
      DISTI # 99W9420
      Vishay IntertechnologiesMOSFET, P-CH, -20V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:19WRoHS Compliant: Yes
      RoHS: Compliant
      0
      • 50000:$0.2090
      • 30000:$0.2190
      • 20000:$0.2350
      • 10000:$0.2520
      • 5000:$0.2730
      • 1:$0.2790
      SIA445EDJ-T1-GE3
      DISTI # 63W4104
      Vishay IntertechnologiesMOSFET Transistor, P Channel, 12 A, -20 V, 0.0135 ohm, -4.5 V, -500 mV RoHS Compliant: Yes
      RoHS: Compliant
      8250
      • 1000:$0.2590
      • 500:$0.3240
      • 250:$0.3580
      • 100:$0.3920
      • 50:$0.4330
      • 25:$0.4750
      • 10:$0.5160
      • 1:$0.6400
      SIA445EDJ-T1-GE3
      DISTI # 78-SIA445EDJ-T1-GE3
      Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
      RoHS: Compliant
      2841
      • 1:$0.6300
      • 10:$0.5390
      • 100:$0.3920
      • 500:$0.3240
      • 1000:$0.2590
      • 3000:$0.2340
      • 6000:$0.2180
      • 9000:$0.2100
      • 24000:$0.2090
      SIA445EDJ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
      RoHS: Compliant
      Americas - 6000
      • 3000:$0.2350
      • 6000:$0.2200
      • 9000:$0.2120
      • 12000:$0.2090
      SIA445EDJ-T1-GE3
      DISTI # 7879285
      Vishay IntertechnologiesSupplied as a Tape, P-Channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70 Vishay SIA445EDJ-T1-GE3, TA
      Min Qty: 10
      Container: Ammo Pack
      250
      • 10:$0.5470
      • 100:$0.3110
      SIA445EDJ-T1-GE3
      DISTI # 1656976
      Vishay IntertechnologiesOn a Reel of 3000, P-Channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70 Vishay SIA445EDJ-T1-GE3, RL
      Min Qty: 3000
      Container: Reel
      0
      • 3000:$0.2420
      SIA445EDJ-T1-GE3
      DISTI # 2283656RL
      Vishay IntertechnologiesMOSFET P-CH, 20V, SC-70
      RoHS: Compliant
      0
      • 5000:£0.1800
      • 1000:£0.1950
      • 500:£0.2700
      • 250:£0.2990
      • 100:£0.3260
      • 10:£0.4780
      • 1:£0.6100
      SIA445EDJ-T1-GE3
      DISTI # 2283656
      Vishay IntertechnologiesMOSFET P-CH, 20V, SC-70
      RoHS: Compliant
      8250
      • 5000:£0.1800
      • 1000:£0.1950
      • 500:£0.2700
      • 250:£0.2990
      • 100:£0.3260
      • 10:£0.4780
      • 1:£0.6100
      SIA445EDJ-T1-GE3
      DISTI # 2283656
      Vishay IntertechnologiesMOSFET P-CH, 20V, SC-70
      RoHS: Compliant
      5260
      • 9000:$0.3160
      • 6000:$0.3290
      • 3000:$0.3530
      • 1000:$0.3900
      • 500:$0.4880
      • 100:$0.5910
      • 10:$0.7780
      • 1:$0.9640
      Bild Teil # Beschreibung
      MAX40002ANS+T

      Mfr.#: MAX40002ANS+T

      OMO.#: OMO-MAX40002ANS-T

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      Mfr.#: LT6106HS5#TRMPBF

      OMO.#: OMO-LT6106HS5-TRMPBF

      Current Sense Amplifiers L Cost, 36V Hi Side C Sense Amp
      PMZ290UNE2YL

      Mfr.#: PMZ290UNE2YL

      OMO.#: OMO-PMZ290UNE2YL

      MOSFET 20V N-Channel Trench MOSFET
      SI8821EDB-T2-E1

      Mfr.#: SI8821EDB-T2-E1

      OMO.#: OMO-SI8821EDB-T2-E1

      MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
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      Mfr.#: NC7SZ38P5X

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      Logic Gates UHS 2-Inp NAND Gate
      RC0100JR-070RL

      Mfr.#: RC0100JR-070RL

      OMO.#: OMO-RC0100JR-070RL

      Thick Film Resistors - SMD ZERO OHM JUMPER
      67996-420HLF

      Mfr.#: 67996-420HLF

      OMO.#: OMO-67996-420HLF

      Headers & Wire Housings 20P DR UNSHRD HRD TIN OVER NI
      RC0100JR-070RL

      Mfr.#: RC0100JR-070RL

      OMO.#: OMO-RC0100JR-070RL-YAGEO

      GENERAL PURPOSE CHIP RESISTORS WITH TOLERANCE 5 %
      PMZ290UNE2YL

      Mfr.#: PMZ290UNE2YL

      OMO.#: OMO-PMZ290UNE2YL-NEXPERIA

      MOSFET N-CH 20V 1.02A SOT323
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      Mfr.#: MAX40002ANS+T

      OMO.#: OMO-MAX40002ANS-T-MAXIM-INTEGRATED

      Neu und Original
      Verfügbarkeit
      Aktie:
      17
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SIA445EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,64 $
      0,64 $
      10
      0,52 $
      5,16 $
      100
      0,39 $
      39,20 $
      500
      0,32 $
      162,00 $
      1000
      0,26 $
      259,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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