IRG4PH40UD2-EP

IRG4PH40UD2-EP
Mfr. #:
IRG4PH40UD2-EP
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 1200V UltraFast 5-40kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4PH40UD2-EP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4PH40UD2-EP DatasheetIRG4PH40UD2-EP Datasheet (P4-P6)IRG4PH40UD2-EP Datasheet (P7-P9)IRG4PH40UD2-EP Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
IRG4PH40UD2-EP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
2.43 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
41 A
Pd - Verlustleistung:
160 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
41 A
Höhe:
20.8 mm
Länge:
16.1 mm
Breite:
5.5 mm
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
IGBTs
Teil # Aliase:
SP001533572
Gewichtseinheit:
1.340411 oz
Tags
IRG4PH40UD2-EP, IRG4PH40UD2-E, IRG4PH40UD2, IRG4PH40UD, IRG4PH40U, IRG4PH4, IRG4PH, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
TRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,41A I(C),TO-247AD ;RoHS Compliant: Yes
***Components
In a Pack of 2, Infineon IRG4PH40UD2-EP IGBT, 41 A 1200 V, 3-Pin TO-247AD
***ernational Rectifier
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
***ical
Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AD
***ineon
Target Applications: Solar; Welding
***i-Key
IGBT W/DIODE 1200V 41A TO247AD
*** Source Electronics
IGBT 1200V 41A 160W TO247AD
***nell
IGBT, TO-247AD; Transistor type:IGBT; Voltage, Vces:1200V; Current, Ic continuous a max:21A; Voltage, Vce sat max:3.1V; Power dissipation:160W; Case style:TO-247AD; Current, Icm pulsed:82A; Pins, No. of:3; Power, Pd:160W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Time, fall max:200ns; Time, rise:26ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:1200V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRG4PH40UD2-EP
DISTI # IRG4PH40UD2-EP-ND
Infineon Technologies AGIGBT 1200V 41A 160W TO247AD
RoHS: Compliant
Min Qty: 400
Container: Bag
Limited Supply - Call
  • 400:$4.6399
IRG4PH40UD2-EP
DISTI # IRG4PH40UD2-EP
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AD - Rail/Tube (Alt: IRG4PH40UD2-EP)
RoHS: Compliant
Min Qty: 400
Container: Tube
Americas - 0
  • 400:$3.5900
  • 800:$3.3900
  • 1600:$3.2900
  • 2400:$3.1900
  • 4000:$3.0900
IRG4PH40UD2-EP
DISTI # 942-IRG4PH40UD2-EP
Infineon Technologies AGIGBT Transistors 1200V UltraFast 5-40kHz
RoHS: Compliant
400
  • 1:$6.1900
  • 10:$5.5900
  • 25:$5.3300
  • 100:$4.6300
  • 250:$4.4200
  • 500:$4.0300
IRG4PH40UD2-EP
DISTI # 9074909P
Infineon Technologies AGIGBT N-CHANNEL 1200V 41A TO-247AD, TU218
  • 10:£3.7550
  • 50:£3.6800
  • 100:£3.6050
  • 250:£3.4450
IRG4PH40UD2-EP
DISTI # XSLY00000001100
INFINEON/IRTO-247AC
RoHS: Compliant
720
  • 425:$1.7000
  • 720:$1.5900
Bild Teil # Beschreibung
1N4744AGe3

Mfr.#: 1N4744AGe3

OMO.#: OMO-1N4744AGE3

Zener Diodes Zener Diodes
GBJ1510-F

Mfr.#: GBJ1510-F

OMO.#: OMO-GBJ1510-F

Bridge Rectifiers 1000V 15A
IRG4PH40UDPBF

Mfr.#: IRG4PH40UDPBF

OMO.#: OMO-IRG4PH40UDPBF

IGBT Transistors 1200V UltraFast 5-40kHz
PC364NJ0000F

Mfr.#: PC364NJ0000F

OMO.#: OMO-PC364NJ0000F

Transistor Output Optocouplers Lo If/Hi CMR PC354
MT46V16M16P-5B:M

Mfr.#: MT46V16M16P-5B:M

OMO.#: OMO-MT46V16M16P-5B-M

DRAM DDR 256M 16MX16 TSOP
T598B107M2R5ATE070

Mfr.#: T598B107M2R5ATE070

OMO.#: OMO-T598B107M2R5ATE070

Tantalum Capacitors - Polymer SMD 2.5V 100uF 1311 20% ESR=70mOhms AEC-Q200
P6SMB510A-E3/52

Mfr.#: P6SMB510A-E3/52

OMO.#: OMO-P6SMB510A-E3-52

ESD Suppressors / TVS Diodes RECOMMENDED ALT 78-P6SMB510A-M352
1N4744AGe3

Mfr.#: 1N4744AGe3

OMO.#: OMO-1N4744AGE3-MICROSEMI

Zener Diodes
B43545B9227M000

Mfr.#: B43545B9227M000

OMO.#: OMO-B43545B9227M000-EPCOS

400V 220UF ALUMINIUM SNAP IN CAPACITOR, BX
PC364NJ0000F

Mfr.#: PC364NJ0000F

OMO.#: OMO-PC364NJ0000F-SOCLE

Transistor Output Optocouplers Lo If/Hi CMR PC354
Verfügbarkeit
Aktie:
719
Auf Bestellung:
2702
Menge eingeben:
Der aktuelle Preis von IRG4PH40UD2-EP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,18 $
6,18 $
10
5,58 $
55,80 $
25
5,32 $
133,00 $
100
4,62 $
462,00 $
250
4,42 $
1 105,00 $
500
4,02 $
2 010,00 $
1000
3,51 $
3 510,00 $
2500
3,38 $
8 450,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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