PartNumber | IRG4PH40UD2-EP | IRG4PH40UDPBF | IRG4PH40UD-EPBF |
Description | IGBT Transistors 1200V UltraFast 5-40kHz | IGBT Transistors 1200V UltraFast 5-40kHz | IGBT Transistors 1200V UltraFast 5-40kHz |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 2.43 V | 2.43 V | 2.43 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 41 A | 41 A | 41 A |
Pd Power Dissipation | 160 W | 160 W | 160 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 41 A | 41 A | 41 A |
Height | 20.8 mm | 20.7 mm | 20.7 mm |
Length | 16.1 mm | 15.87 mm | 15.87 mm |
Width | 5.5 mm | 5.31 mm | 5.31 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 400 | 400 | 25 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001533572 | SP001537144 | SP001537194 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |