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IXFH50N60P3

IXFH50N60P3
Mfr. #:
IXFH50N60P3
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH50N60P3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH50N60P3 DatasheetIXFH50N60P3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFH50N60P3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
145 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
94 nC
Pd - Verlustleistung:
1040 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFH50N60
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
55 S, 32 S
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFH50, IXFH5, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
Mosfet Transistor, N Channel, 50 A, 600 V, 0.16 Ohm, 10 V, 5 V Rohs Compliant: Yes
***trelec
MOSFET, Single - N-Channel, 600V, 50A, 1.04kW, TO-247
***ark
Mosfet, N-Ch, 600V, 50A, 150Deg C, 1.04W; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.16Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***p One Stop Global
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Bulk
***nell
MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 120W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.125 Ohm 45.5 nC 190 W Flange Mount Mosfet - TO-247-3
***ark
MOSFET, N-CH, 600V, 26A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount Mdmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.094Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***et
Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ark
MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ure Electronics
Single N-Channel 600 V 125 mOhm 56 nC CoolMOS™ Power Mosfet - TO-247-3
***et
Transistor MOSFET N-Channel 600V 30A 3-Pin TO-247 Tube
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, 600V, 30A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***p One Stop Global
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Bulk
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 30A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 120W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™ process to bring superior performance and energy savings to a variety of applications. Featuring low on state resistances and extremely low gate charge values, IXYS PolarP3™ HiPerFETs enable the development of more efficient power subsystems in applications such as switch/resonant-mode power supplies and UPS' for telecommunication, base stations, servers and server farms and energy efficient consumer appliances. Other applications that will benefit from the MOSFETs include power factor correction circuits, motor drives, lamp ballasts, laser drivers, DC-DC converters, battery chargers, robotic and servo control.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFH50N60P3
DISTI # V99:2348_15876027		IXYS CorporationTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		18
  • 2500:$4.0080
  • 1000:$4.3290
  • 500:$4.9250
  • 250:$5.2120
  • 100:$5.2780
  • 50:$5.8640
  • 25:$5.9570
  • 10:$6.6190
  • 1:$8.0894
IXFH50N60P3
DISTI # V36:1790_15876027		IXYS CorporationTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		0
  • 2500:$3.9920
  • 1000:$4.4330
  • 500:$5.0150
  • 250:$5.2070
  • 100:$5.7120
  • 50:$5.7200
  • 25:$6.6880
  • 10:$6.8200
  • 1:$6.8340
IXFH50N60P3
DISTI # IXFH50N60P3-ND		IXYS CorporationMOSFET N-CH 600V 50A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		6In Stock
  • 510:$4.5880
  • 120:$5.4760
  • 30:$6.0680
  • 10:$6.6600
  • 1:$7.4000
IXFH50N60P3
DISTI # 28991183		IXYS CorporationTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		18
  • 2500:$4.3086
  • 1000:$4.6537
  • 500:$5.2944
  • 250:$5.6029
  • 100:$5.6738
  • 50:$6.3038
  • 25:$6.4038
  • 10:$7.1154
  • 2:$8.6961
IXFH50N60P3
DISTI # 68X2862		IXYS CorporationMOSFET Transistor, N Channel, 50 A, 600 V, 0.16 ohm, 10 V, 5 V RoHS Compliant: Yes26
  • 500:$4.6300
  • 250:$5.0700
  • 100:$5.5200
  • 50:$5.8200
  • 25:$6.1200
  • 10:$6.8000
  • 1:$7.4700
IXFH50N60P3
DISTI # 747-IXFH50N60P3		IXYS CorporationMOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
RoHS: Compliant		4
  • 1:$7.4000
  • 10:$6.7300
  • 25:$6.0600
  • 50:$5.7600
  • 100:$5.4700
  • 250:$5.0200
  • 500:$4.5800
  • 1000:$4.1400
IXFH50N60P3
DISTI # 8024388P		IXYS CorporationMOSFET N 600V 50A POLAR3 HIPERFET TO247, TU115
  • 500:£3.5500
  • 250:£3.8200
  • 100:£4.1000
  • 25:£4.4800
IXFH50N60P3
DISTI # 8024388		IXYS CorporationMOSFET N 600V 50A POLAR3 HIPERFET TO247, EA24
  • 500:£3.5500
  • 250:£3.8200
  • 100:£4.1000
  • 25:£4.4800
  • 1:£5.4600
IXFH50N60P3
DISTI # IXFH50N60P3		IXYS CorporationTransistor: N-MOSFET,600V,50A,1040W,TO247-330
  • 30:$4.3700
  • 10:$4.8600
  • 3:$5.5000
  • 1:$6.1100
IXFH50N60P3
DISTI # IXFH50N60P3		IXYS CorporationN-Ch 600V 50A 1040W 0,16R TO247AD
RoHS: Compliant		2
  • 1:€7.8500
  • 5:€4.8500
  • 30:€3.8500
  • 60:€3.7000
IXFH50N60P3
DISTI # 2429710		IXYS CorporationMOSFET, N CH, 600V, 50A, TO-247
RoHS: Compliant		6
  • 510:$7.0100
  • 120:$8.3700
  • 30:$9.2700
  • 1:$11.3000
IXFH50N60P3
DISTI # 2429710		IXYS CorporationMOSFET, N CH, 600V, 50A, TO-2476
  • 100:£4.3900
  • 50:£4.6200
  • 10:£4.8500
  • 5:£5.9300
  • 1:£6.4800
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Verfügbarkeit
Aktie:
150
Auf Bestellung:
2133
Menge eingeben:
Der aktuelle Preis von IXFH50N60P3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,40 $
7,40 $
10
6,73 $
67,30 $
25
6,06 $
151,50 $
50
5,76 $
288,00 $
100
5,47 $
547,00 $
250
5,02 $
1 255,00 $
500
4,58 $
2 290,00 $
1000
4,14 $
4 140,00 $
2500
4,09 $
10 225,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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