PartNumber | IXFH50N50P3 | IXFH50N30Q3 | IXFH50N20 |
Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | MOSFET DIODE Id50 BVdass200 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 300 V | 200 V |
Id Continuous Drain Current | 50 A | 50 A | 50 A |
Rds On Drain Source Resistance | 120 mOhms | 80 mOhms | 45 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 85 nC | 65 nC | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 960 W | 690 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | Polar3, HiperFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | - | 21.46 mm |
Length | 16.26 mm | - | 16.26 mm |
Series | IXFH50N50 | IXFH50N30 | IXFH50N20 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Polar3 HiperFET Power MOSFET | - | - |
Width | 5.3 mm | - | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 27 S | - | 32 S |
Fall Time | 10 ns | - | 16 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 250 ns | 15 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 53 ns | - | 72 ns |
Typical Turn On Delay Time | 25 ns | - | 18 ns |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.229281 oz |