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IPD30N03S2L20ATMA1

IPD30N03S2L20ATMA1
Mfr. #:
IPD30N03S2L20ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD30N03S2L20ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD30N03S2L20ATMA1 DatasheetIPD30N03S2L20ATMA1 Datasheet (P4-P6)IPD30N03S2L20ATMA1 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IPD30N03S2L20ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
14.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
19 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
60 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
5 ns
Teil # Aliase:
IPD30N03S2L-20 IPD3N3S2L2XT SP000254466
Gewichtseinheit:
0.139332 oz
Tags
IPD30N03S2, IPD30N03, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S2L20ATMA1
***ical
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***i-Key
MOSFET N-CH 30V 30A TO252-3
***ronik
N-CH 30V 30A 20mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 30V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
Teil # Mfg. Beschreibung Aktie Preis
IPD30N03S2L20ATMA1
DISTI # V36:1790_06391064		Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.3046
  • 1250000:$0.3048
  • 250000:$0.3166
  • 25000:$0.3353
  • 2500:$0.3383
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3181In Stock
  • 1000:$0.3845
  • 500:$0.4806
  • 100:$0.6080
  • 10:$0.7930
  • 1:$0.9000
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3181In Stock
  • 1000:$0.3845
  • 500:$0.4806
  • 100:$0.6080
  • 10:$0.7930
  • 1:$0.9000
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2955
  • 12500:$0.3033
  • 5000:$0.3150
  • 2500:$0.3383
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N03S2L20ATMA1)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2659
  • 5955:$0.2709
  • 3573:$0.2809
  • 2382:$0.2909
  • 1191:$0.3019
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S2L20ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3319
  • 15000:$0.3379
  • 10000:$0.3499
  • 5000:$0.3629
  • 2500:$0.3759
IPD30N03S2L20ATMA1
DISTI # SP000254466		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000254466)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.3169
  • 15000:€0.3419
  • 10000:€0.3699
  • 5000:€0.4039
  • 2500:€0.4939
IPD30N03S2L20ATMA1
DISTI # 34AC1669		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes617
  • 1000:$0.3600
  • 500:$0.3900
  • 250:$0.4190
  • 100:$0.4490
  • 50:$0.5320
  • 25:$0.6140
  • 10:$0.6960
  • 1:$0.8280
IPD30N03S2L20ATMA1
DISTI # 726-IPD30N03S2L20ATM		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS
RoHS: Compliant		3168
  • 1:$0.8500
  • 10:$0.7320
  • 100:$0.5620
  • 500:$0.4960
  • 1000:$0.3920
  • 2500:$0.3470
  • 10000:$0.3340
IPD30N03S2L-20
DISTI # 726-IPD30N03S2L-20		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS
RoHS: Compliant		3952
  • 1:$0.8500
  • 10:$0.7320
  • 100:$0.5620
  • 500:$0.4960
  • 1000:$0.3920
  • 2500:$0.3470
  • 10000:$0.3340
IPD30N03S2L20ATMA1Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		86163
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
IPD30N03S2L20ATMA1
DISTI # 2781081		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-2521532
  • 500:£0.2660
  • 250:£0.3030
  • 100:£0.3400
  • 10:£0.5770
  • 1:£0.7160
IPD30N03S2L20ATMA1
DISTI # 2781081		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-252
RoHS: Compliant		617
  • 5000:$0.4580
  • 1000:$0.4830
  • 500:$0.5100
  • 250:$0.5900
  • 100:$0.6980
  • 25:$0.8550
  • 5:$0.9810
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IPD30N03S2L20ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,85 $
0,85 $
10
0,73 $
7,32 $
100
0,56 $
56,20 $
500
0,50 $
248,00 $
1000
0,39 $
392,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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