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KSH3055TM

KSH3055TM
Mfr. #:
KSH3055TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
KSH3055TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
60 V
Kollektor- Basisspannung VCBO:
70 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
1.1 V
Maximaler DC-Kollektorstrom:
10 A
Bandbreitenprodukt fT gewinnen:
2 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
KSH3055
DC-Stromverstärkung hFE Max:
100
Höhe:
2.3 mm
Länge:
6.6 mm
Verpackung:
Spule
Breite:
6.1 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
10 A
DC-Kollektor/Basisverstärkung hfe Min:
20
Pd - Verlustleistung:
20 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.009184 oz
Tags
KSH3055T, KSH305, KSH30, KSH3, KSH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,bjt,npn,60V V(Br)Ceo,10A I(C),to-252 Rohs Compliant: Yes
***el Electronic
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***r Electronics
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
***et Europe
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) DPAK T/R
***nell
TRANS, NPN, 60V, 10A, 20W, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 20W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
KSH Series NPN 1.75 W 60 V 10 A SMT Epitaxial Silicon Transistor - TO-252-3
***r Electronics
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***et Europe
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
Transistor; Current Rating:5A; Leaded Pr; Transistor; Current Rating:5A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package / Case:D-PAK; Peak Reflow Compatible (260 C):Yes; Voltage Rating:60V
***nell
TRANS, NPN, 60V, 10A, 20W, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 20W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
NPN Bipolar Power Transistor, 10 A, 60 V
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MJD3055 Series 60 V 10 A Surface Mount NPN Epitaxial Silicon Transistor - DPAK-3
***r Electronics
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
***ow.cn
Trans GP BJT NPN 60V 10A 1750mW 3-Pin(2+Tab) DPAK T/R
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ark
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Continuous Collector Current, Ic:10000mA; Collector Emitter Saturation Voltage, Vce(sat):1.1V; Power Dissipation, Pd:1750mW ;RoHS Compliant: Yes
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
8 A, 80 V NPN Power Bipolar Junction Transistor
***ure Electronics
MJD Series NPN 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3
*** Stop Electro
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
***ment14 APAC
TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:1.75W; DC Collector Current:8A; DC Current Gain hFE:60; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:3A; Current Gain Hfe Max:400; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Current Ic hfe -Do Not Use See ID 1182:3000mA; DC Current Gain Hfe Max:400; DC Current Gain Hfe Min:200; Gain Bandwidth ft Typ:50MHz; Hfe Min:200; Package / Case:D-PAK; Power Dissipation Pd:1.75W; Power Dissipation Ptot Max:20W; Termination Type:SMD
***roFlash
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJD31C Series 100 V 3 A 1.5 W NPN High Voltage Transistor - TO252 (DPAK)
***el Electronic
Trans GP BJT NPN 100V 3A Automotive 3-Pin(2+Tab) TO-252 T/R
***ical
Trans GP BJT NPN 300V 0.5A 1560mW Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
MJD340: 300 V 500 mA 15 W Surface Mount NPN High Voltage Transistor- TO-252
***ical
Trans GP BJT NPN 75V 5A 4000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
ZXT1053AK Series NPN 75 V 5 A SMT Silicon Medium Power Transistor - TO-252
***(Formerly Allied Electronics)
75V NPN Low Saturation Transistor DPAK
***ronik
NPN TRANSISTOR 75V 5A 2,1W DPAK
***ment14 APAC
Transistor, NPN, 75V, 5A, 150DEG C, 4W;
***ark
Pwr Low Sat Transistor To252 T&r 2.5K Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
KSH3055TM
DISTI # 30702938		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST2500
  • 50000:$0.1843
  • 25000:$0.1872
  • 10000:$0.1949
  • 2500:$0.2026
KSH3055TM
DISTI # 26636579		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST2500
  • 2500:$0.2571
KSH3055TM
DISTI # KSH3055TMCT-ND		ON SemiconductorTRANS NPN 60V 10A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7300In Stock
  • 1000:$0.2692
  • 500:$0.3366
  • 100:$0.4258
  • 10:$0.5550
  • 1:$0.6300
KSH3055TM
DISTI # KSH3055TMDKR-ND		ON SemiconductorTRANS NPN 60V 10A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7300In Stock
  • 1000:$0.2692
  • 500:$0.3366
  • 100:$0.4258
  • 10:$0.5550
  • 1:$0.6300
KSH3055TM
DISTI # KSH3055TMTR-ND		ON SemiconductorTRANS NPN 60V 10A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 12500:$0.2178
  • 5000:$0.2206
  • 2500:$0.2369
KSH3055TM
DISTI # C1S226600616438		ON SemiconductorTrans GP BJT NPN 60V 10A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.3090
KSH3055TM
DISTI # KSH3055TM		ON SemiconductorTrans GP BJT NPN 60V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: KSH3055TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.1759
  • 5000:$0.1749
  • 10000:$0.1729
  • 15000:$0.1709
  • 25000:$0.1669
KSH3055TM
DISTI # 82C7823		ON SemiconductorTRANSISTOR,BJT,NPN,60V V(BR)CEO,10A I(C),TO-252 ROHS COMPLIANT: YES0
  • 1:$0.2360
  • 2500:$0.2350
  • 10000:$0.2270
  • 25000:$0.2220
  • 50000:$0.2160
KSH3055TM
DISTI # 512-KSH3055TM		ON SemiconductorBipolar Transistors - BJT NPN Si Transistor Epitaxial
RoHS: Compliant		4845
  • 1:$0.5900
  • 10:$0.4830
  • 100:$0.3120
  • 1000:$0.2490
  • 2500:$0.2110
  • 10000:$0.2030
  • 25000:$0.1950
KSH3055TF
DISTI # 512-KSH3055TF		ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
RoHS: Compliant		3848
  • 1:$0.5700
  • 10:$0.4680
  • 100:$0.3020
  • 1000:$0.2420
Bild Teil # Beschreibung
ESP8266EX

Mfr.#: ESP8266EX

OMO.#: OMO-ESP8266EX

 RF System on a Chip - SoC SMD IC ESP8266EX, QFN32-pin, 5*5mm
LT1716CS5#TRMPBF

Mfr.#: LT1716CS5#TRMPBF

OMO.#: OMO-LT1716CS5-TRMPBF

 Analog Comparators SOT-23, 44V, Over-The-Top, uP, Prec R2R
88E1512-A0-NNP2I000

Mfr.#: 88E1512-A0-NNP2I000

OMO.#: OMO-88E1512-A0-NNP2I000

 Ethernet ICs Single-port EEE GE PHY w/SGMII in 56-pin QFN package Industrial Temp
STM32F103RCT7TR

Mfr.#: STM32F103RCT7TR

OMO.#: OMO-STM32F103RCT7TR

 ARM Microcontrollers - MCU
HCNR201-300E

Mfr.#: HCNR201-300E

OMO.#: OMO-HCNR201-300E

 High Linearity Optocouplers 1 Ch 60mW 25mA
HCNR201-300E

Mfr.#: HCNR201-300E

OMO.#: OMO-HCNR201-300E-BROADCOM

 High Linearity Optocouplers 1 Ch 60mW 25mA
ESP8266EX

Mfr.#: ESP8266EX

OMO.#: OMO-ESP8266EX-ESPRESSIF-SYSTEMS

 SMD IC ESP8266EX, QFN32-PIN, 5_5
STM32F103RCT7TR

Mfr.#: STM32F103RCT7TR

OMO.#: OMO-STM32F103RCT7TR-STMICROELECTRONICS

 IC MCU 32BIT 256KB FLASH 64LQFP
ST80X-18S(30)

Mfr.#: ST80X-18S(30)

OMO.#: OMO-ST80X-18S-30--HIROSE

 Neu und Original
88E1512-A0-NNP2I000

Mfr.#: 88E1512-A0-NNP2I000

OMO.#: OMO-88E1512-A0-NNP2I000-1190

 PHY 1-CH 10Mbps/100Mbps/1Gbps 1.8V/2.5V/3.3V 56-Pin QFN EP (Alt: 88E1512-A0-NNP2I000)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von KSH3055TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,58 $
0,58 $
10
0,48 $
4,82 $
100
0,31 $
31,10 $
1000
0,25 $
248,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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