 |  | | |
| PartNumber | KSH3055ITU | KSH3055 | KSH3055I |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Junction Transistor, NPN Type, TO-252 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | E | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 70 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 10 A | - | - |
| Gain Bandwidth Product fT | 2 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 100 | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.6 mm | - | - |
| Packaging | Tube | - | - |
| Width | 2.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 10 A | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 70 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSH3055TM | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| KSH3055TF | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| KSH3055ITU | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | ||
| KSH3055TF-CUT TAPE | Neu und Original | ||
| KSH3055 | Bipolar Junction Transistor, NPN Type, TO-252 | ||
| KSH3055I | Neu und Original | ||
ON Semiconductor |
KSH3055TM | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| KSH3055TF | TRANS NPN 60V 10A DPAK | ||
| KSH3055ITU | TRANS NPN 60V 10A I-PAK |