OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIA427DJ-T1-GE3

SIA427DJ-T1-GE3
Mfr. #:
SIA427DJ-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 8V 12A SC-70-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA427DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIA427DJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
SIA4xxDJ
Verpackung
Spule
Teil-Aliasnamen
SIA427DJ-GE3
Montageart
SMD/SMT
Paket-Koffer
PowerPAK-SC-70-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
3.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
5 V
ID-Dauer-Drain-Strom
- 12 A
Vds-Drain-Source-Breakdown-Voltage
- 8 V
Rds-On-Drain-Source-Widerstand
13 mOhms
Transistor-Polarität
P-Kanal
Qg-Gate-Ladung
33 nC
Vorwärts-Transkonduktanz-Min
37 S
Tags
SIA427D, SIA427, SIA42, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6
***ical
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
MOSFET, P CH, -8V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-1.2V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. Learn MoreView entire Vishay Siliconix Power MOSFET line
Teil # Mfg. Beschreibung Aktie Preis
SIA427DJ-T1-GE3
DISTI # V72:2272_09216832		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 25:$0.3422
  • 10:$0.3437
  • 1:$0.4261
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.2131
SIA427DJ-T1-GE3
DISTI # 30150538		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 37:$0.3422
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1809
  • 6000:$0.1759
  • 12000:$0.1689
  • 18000:$0.1639
  • 30000:$0.1599
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA427DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA427DJ-T1-GE3
    DISTI # 69W7155    		Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:-1.2V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
      SIA427DJ-T1-GE3.
      DISTI # 30AC0109      		Vishay IntertechnologiesP-CHANNEL 8-V (D-S) MOSFET , ROHS COMPLIANT: NO0
      • 1:$0.2090
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK SC-70-6
      RoHS: Compliant      		3000Reel
      • 3000:$0.1720
      SIA427DJ-T1-GE3
      DISTI # 781-SIA427DJ-T1-GE3      		Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant      		197
      • 1:$0.6000
      • 10:$0.4520
      • 100:$0.3360
      • 500:$0.2760
      • 1000:$0.2130
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay Siliconix12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET576
      • 251:$0.1680
      • 57:$0.2400
      • 1:$0.4800
      SIA427DJ-T1-GE3Vishay Semiconductors12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET9
      • 1:$0.4800
      SIA427DJ-T1-GE3
      DISTI # 2459389      		Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK S
      RoHS: Compliant      		0
      • 1:$0.9500
      • 10:$0.7160
      • 100:$0.5320
      • 500:$0.4370
      • 1000:$0.3380
      • 3000:$0.3310
      SIA427DJ-T1-GE3Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant      		Americas -
      • 3000:$0.1700
      • 6000:$0.1610
      • 12000:$0.1560
      • 24000:$0.1530
      SIA427DJ-T1-GE3
      DISTI # C1S803601298676      		Vishay IntertechnologiesMOSFETs2877
      • 250:$0.2658
      • 100:$0.2747
      • 25:$0.3407
      • 10:$0.3422
      Bild Teil # Beschreibung
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3

      		 MOSFET 8V 12A 19W 13mohms @ 4.5V
      SIA427DJ-T1-GE3-CUT TAPE

      Mfr.#: SIA427DJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA427DJ-T1-GE3-CUT-TAPE-1190

      		 Neu und Original
      SIA427DJ

      Mfr.#: SIA427DJ

      OMO.#: OMO-SIA427DJ-1190

      		 Neu und Original
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3-VISHAY

      		 MOSFET P-CH 8V 12A SC-70-6
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von SIA427DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,23 $
      0,23 $
      10
      0,22 $
      2,17 $
      100
      0,21 $
      20,52 $
      500
      0,19 $
      96,90 $
      1000
      0,18 $
      182,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top