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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIR836DP-T1-GE3 DISTI # V72:2272_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 7 |
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| SIR836DP-T1-GE3 DISTI # V36:1790_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 0 |
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| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 630In Stock |
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| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 630In Stock |
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| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
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| SIR836DP-T1-GE3 DISTI # 33693676 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 3000 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
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| SIR836DP-T1-GE3 DISTI # 86R3808 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
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| SIR836DP-T1-GE3 DISTI # 05W6931 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR836DP-T1-GE3 DISTI # 78-SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 20083 |
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| SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | Americas - 66000 |
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| SIR836DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3 |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
|
Mfr.#: SIR836DP-T1-GE3-CUT TAPE |
Neu und Original |
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Mfr.#: SIR836DP OMO.#: OMO-SIR836DP-1190 |
Neu und Original |
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Mfr.#: SIR836DP-T1-E3 OMO.#: OMO-SIR836DP-T1-E3-1190 |
Neu und Original |
|
Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
|
Mfr.#: SIR836DPT1GE3 OMO.#: OMO-SIR836DPT1GE3-1190 |
Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |