SIR836DP-T1-GE3

SIR836DP-T1-GE3
Mfr. #:
SIR836DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 21A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR836DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIR836DP-GE3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SO-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR SO-8
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
15.6W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
600pF @ 20V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
21A (Tc)
Rds-On-Max-Id-Vgs
19 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
18nC @ 10V
Pd-Verlustleistung
15.6 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
21 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
19 mOhms
Transistor-Polarität
N-Kanal
Tags
SIR836DP-T, SIR836, SIR83, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR836DP Series N-Channel 40 V 0.0225 Ohm 15.6 W SMT Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 40V 21A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 40V 21A PPAK SO-8
***ark
N-CHANNEL 40-V (D-S) MOSFET
***
N-CHANNEL 40-V (D-S)
Teil # Mfg. Beschreibung Aktie Preis
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.3350
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.6559
    • 6000:€0.4469
    • 12000:€0.3849
    • 18000:€0.3549
    • 30000:€0.3309
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.3049
    • 6000:$0.2959
    • 12000:$0.2839
    • 18000:$0.2759
    • 30000:$0.2689
    SIR836DP-T1-GE3
    DISTI # 05W6931
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes0
    • 1:$0.6070
    • 10:$0.5880
    • 100:$0.4650
    • 250:$0.4410
    • 500:$0.4120
    • 1000:$0.3300
    SIR836DP-T1-GE3
    DISTI # 86R3808
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3110
    • 3000:$0.3090
    • 6000:$0.2940
    • 12000:$0.2610
    SIR836DP-T1-GE3
    DISTI # 78-SIR836DP-T1-GE3
    Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    446
    • 1:$0.8400
    • 10:$0.6700
    • 100:$0.5090
    • 500:$0.4200
    • 1000:$0.3360
    • 3000:$0.3050
    • 6000:$0.2840
    SIR836DPT1GE3Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 3000
      SIR836DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      Americas - 51000
        Bild Teil # Beschreibung
        SIR836DP-T1-GE3

        Mfr.#: SIR836DP-T1-GE3

        OMO.#: OMO-SIR836DP-T1-GE3

        MOSFET 40V Vds 20V Vgs PowerPAK SO-8
        SIR836DP-T1-GE3-CUT TAPE

        Mfr.#: SIR836DP-T1-GE3-CUT TAPE

        OMO.#: OMO-SIR836DP-T1-GE3-CUT-TAPE-1190

        Neu und Original
        SIR836DP

        Mfr.#: SIR836DP

        OMO.#: OMO-SIR836DP-1190

        Neu und Original
        SIR836DP-T1-E3

        Mfr.#: SIR836DP-T1-E3

        OMO.#: OMO-SIR836DP-T1-E3-1190

        Neu und Original
        SIR836DP-T1-GE3

        Mfr.#: SIR836DP-T1-GE3

        OMO.#: OMO-SIR836DP-T1-GE3-VISHAY

        MOSFET N-CH 40V 21A PPAK SO-8
        SIR836DPT1GE3

        Mfr.#: SIR836DPT1GE3

        OMO.#: OMO-SIR836DPT1GE3-1190

        Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von SIR836DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,36 $
        0,36 $
        10
        0,35 $
        3,45 $
        100
        0,33 $
        32,71 $
        500
        0,31 $
        154,50 $
        1000
        0,29 $
        290,80 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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