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IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH12N90P Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
IXFH12N90P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFH12N90
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
380 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
68 ns
Anstiegszeit
34 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V to 6.5 V
Rds-On-Drain-Source-Widerstand
900 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
32 ns
Qg-Gate-Ladung
56 nC
Vorwärts-Transkonduktanz-Min
8.2 S
Kanal-Modus
Erweiterung
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFH12N90P
DISTI # IXFH12N90P-ND		IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967		IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IXFH12N90P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,60 $
6,60 $
10
6,27 $
62,70 $
100
5,94 $
594,00 $
500
5,61 $
2 805,00 $
1000
5,28 $
5 280,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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